NTLJS2103PTAG

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Tin

Vgs(th) (Max) @ Id :

800mV @ 250μA

Rds On (Max) @ Id, Vgs :

40m Ω @ 3A, 4.5V

Drain to Source Voltage (Vdss) :

12V

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

1.157pF @ 6V

Qualification Status :

COMMERCIAL

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 4.5V

Package / Case :

6-WDFN Exposed Pad

Packaging :

Tape and Reel (TR)

Terminal Position :

Dual

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pbfree Code :

yes

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

1.2V 4.5V

Number of Terminations :

6

FET Type :

P-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PDSO-N6

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pin Count :

6

Terminal Form :

NO LEAD

Current - Continuous Drain (Id) @ 25°C :

3.5A Ta

Mounting Type :

Surface Mount

DS Breakdown Voltage-Min :

12V

Drain Current-Max (Abs) (ID) :

5.9A

Case Connection :

DRAIN

Power Dissipation-Max :

700mW Ta

Drain-source On Resistance-Max :

0.04Ohm

Vgs (Max) :

±8V

Surface Mount :

yes

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Configuration :

SINGLE WITH BUILT-IN DIODE