NTLJS1102PTBG

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Qualification Status :

Not Qualified

Input Capacitance (Ciss) (Max) @ Vds :

1585pF @ 4V

Transistor Element Material :

SILICON

RoHS Status :

RoHS Compliant

Operating Temperature :

-55°C~150°C TJ

FET Type :

P-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 5 days ago)

Power Dissipation :

3.3W

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

720mV @ 250μA

Number of Terminations :

6

Case Connection :

DRAIN

Lead Free :

Lead Free

Vgs (Max) :

±6V

Rds On (Max) @ Id, Vgs :

36m Ω @ 6.2A, 4.5V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Resistance :

36mOhm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Rise Time :

41ns

JESD-609 Code :

e3

Package / Case :

6-WDFN Exposed Pad

Drive Voltage (Max Rds On,Min Rds On) :

1.2V 4.5V

Terminal Position :

Dual

Drain to Source Voltage (Vdss) :

8V

Gate to Source Voltage (Vgs) :

6V

Fall Time (Typ) :

70 ns

Terminal Form :

NO LEAD

Pin Count :

6

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 4.5V

Number of Pins :

6

Mount :

Surface Mount

Drain to Source Breakdown Voltage :

-8V

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tape and Reel (TR)

Turn-Off Delay Time :

80 ns

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

3.7A Ta

Terminal Finish :

Tin (Sn)

Continuous Drain Current (ID) :

3.7A

Power Dissipation-Max :

700mW Ta

Published :

2008