NTLJF4156NTAG

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

3.7A

Qualification Status :

Not Qualified

Vgs(th) (Max) @ Id :

1V @ 250μA

Published :

2006

Surface Mount :

yes

Vgs (Max) :

±8V

Pbfree Code :

yes

Mounting Type :

Surface Mount

Number of Terminations :

6

Pulsed Drain Current-Max (IDM) :

20A

Terminal Position :

Dual

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

427pF @ 15V

Lead Free :

Lead Free

Drain-source On Resistance-Max :

0.09Ohm

Drain to Source Breakdown Voltage :

30V

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Element Configuration :

Single

Number of Elements :

1

Pin Count :

6

Package / Case :

6-WDFN Exposed Pad

Current - Continuous Drain (Id) @ 25°C :

2.5A Tj

Drain Current-Max (Abs) (ID) :

2.5A

Factory Lead Time :

4 Weeks

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Power Dissipation :

1.5W

Gate Charge (Qg) (Max) @ Vgs :

6.5nC @ 4.5V

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

70m Ω @ 2A, 4.5V

ECCN Code :

EAR99

Number of Pins :

6

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

710mW Ta

Turn On Delay Time :

4.8 ns

Gate to Source Voltage (Vgs) :

8V

Rise Time :

9.2ns

FET Feature :

Schottky Diode (Isolated)

Turn-Off Delay Time :

14.2 ns

FET Type :

N-Channel

Case Connection :

DRAIN

Fall Time (Typ) :

9.2 ns

Terminal Form :

C BEND

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Contact Plating :

Tin