NTLJF3118NTAG

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

271pF @ 10V

Pulsed Drain Current-Max (IDM) :

18A

DS Breakdown Voltage-Min :

20V

Number of Terminations :

6

Terminal Finish :

MATTE TIN

FET Feature :

Schottky Diode (Isolated)

Gate Charge (Qg) (Max) @ Vgs :

3.7nC @ 4.5V

Current - Continuous Drain (Id) @ 25°C :

2.6A Ta

JESD-30 Code :

S-XDSO-C6

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Element Material :

SILICON

Power Dissipation-Max :

700mW Ta

Number of Elements :

1

FET Type :

N-Channel

Packaging :

Tape and Reel (TR)

Terminal Form :

C BEND

Rds On (Max) @ Id, Vgs :

65m Ω @ 3.8A, 4.5V

Pbfree Code :

yes

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Package / Case :

6-WDFN Exposed Pad

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

COMMERCIAL

Pin Count :

6

JESD-609 Code :

e3

Drain to Source Voltage (Vdss) :

20V

Peak Reflow Temperature (Cel) :

265

Surface Mount :

yes

Transistor Application :

SWITCHING

Reach Compliance Code :

Unknown

Drain-source On Resistance-Max :

0.065Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±12V

Terminal Position :

Dual

Vgs(th) (Max) @ Id :

1V @ 250μA

Drain Current-Max (Abs) (ID) :

2.6A

RoHS Status :

ROHS3 Compliant