NTJD5121NT2G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Pbfree Code :

yes

Radiation Hardening :

No

Number of Terminations :

6

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Application :

SWITCHING

Height :

1mm

Surface Mount :

yes

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Dual

FET Feature :

Logic Level Gate

Additional Feature :

LOW THRESHOLD

Drain to Source Voltage (Vdss) :

60V

Factory Lead Time :

8 Weeks

Rds On (Max) @ Id, Vgs :

1.6 Ω @ 500mA, 10V

Package / Case :

6-TSSOP, SC-88, SOT-363

Length :

2.2mm

Pin Count :

6

Max Power Dissipation :

250mW

Turn On Delay Time :

22 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Published :

2011

Power Dissipation :

250mW

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

0.9nC @ 4.5V

Drain to Source Breakdown Voltage :

60V

Turn-Off Delay Time :

34 ns

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Threshold Voltage :

1.7V

Operating Temperature :

-55°C~150°C TJ

Fall Time (Typ) :

32 ns

REACH SVHC :

No SVHC

RoHS Status :

ROHS3 Compliant

Rise Time :

34ns

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Terminal Finish :

Tin (Sn)

Packaging :

Tape and Reel (TR)

Width :

1.35mm

Gate to Source Voltage (Vgs) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

26pF @ 20V

FET Type :

2 N-Channel (Dual)

Number of Pins :

6

JESD-609 Code :

e3

Terminal Form :

Gull wing

Number of Elements :

2

Base Part Number :

NTJD5121N

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

295mA