NTJD4401NT4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Feature :

Logic Level Gate

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Input Capacitance (Ciss) (Max) @ Vds :

46pF @ 20V

Fall Time (Typ) :

227 ns

Published :

2008

Terminal Form :

Gull wing

Current Rating :

775mA

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

375m Ω @ 630mA, 4.5V

Peak Reflow Temperature (Cel) :

260

Element Configuration :

Dual

Pin Count :

6

ECCN Code :

EAR99

Max Power Dissipation :

270mW

Turn-Off Delay Time :

786 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

630mA

Gate to Source Voltage (Vgs) :

12V

Power Dissipation :

270mW

Gate Charge (Qg) (Max) @ Vgs :

3nC @ 4.5V

Drain to Source Breakdown Voltage :

20V

JESD-609 Code :

e3

RoHS Status :

RoHS Compliant

Mount :

Surface Mount

Feedback Cap-Max (Crss) :

5 pF

Mounting Type :

Surface Mount

Rise Time :

227ns

Base Part Number :

NTJD4401N

Qualification Status :

Not Qualified

Terminal Finish :

Tin (Sn)

Number of Terminations :

6

Lead Free :

Lead Free

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

40

Number of Pins :

6

Voltage - Rated DC :

20V

FET Type :

2 N-Channel (Dual)

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

2

Drain-source On Resistance-Max :

0.375Ohm

Package / Case :

6-TSSOP, SC-88, SOT-363