NTJD4401NT1

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Rise Time :

227ns

Voltage - Rated DC :

20V

REACH SVHC :

No SVHC

Max Power Dissipation :

270mW

Radiation Hardening :

No

Pbfree Code :

yes

Element Configuration :

Dual

Base Part Number :

NTJD4401N

Height :

990.6μm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Published :

1997

ECCN Code :

EAR99

Number of Terminations :

6

Power Dissipation :

270mW

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Lead Free :

Lead Free

Gate to Source Voltage (Vgs) :

12V

Length :

2.1844mm

Packaging :

Tape and Reel (TR)

FET Feature :

Logic Level Gate

Feedback Cap-Max (Crss) :

5 pF

FET Type :

2 N-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

3nC @ 4.5V

Fall Time (Typ) :

227 ns

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Current Rating :

630mA

Surface Mount :

yes

Continuous Drain Current (ID) :

630mA

Transistor Application :

SWITCHING

Terminal Finish :

Tin (Sn)

Factory Lead Time :

17 Weeks

Package / Case :

6-TSSOP, SC-88, SOT-363

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

1.3462mm

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

375m Ω @ 630mA, 4.5V

Terminal Form :

Gull wing

Resistance :

220mOhm

Number of Pins :

6

Pin Count :

6

Turn On Delay Time :

83 ns

Turn-Off Delay Time :

786 ns

Peak Reflow Temperature (Cel) :

260

Threshold Voltage :

920mV

Input Capacitance (Ciss) (Max) @ Vds :

46pF @ 20V

Number of Elements :

2

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

40

Drain to Source Breakdown Voltage :

20V

Mounting Type :

Surface Mount

Nominal Vgs :

920 mV