NTJD4158CT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Gate Charge (Qg) (Max) @ Vgs :

1.5nC @ 5V

Lead Free :

Lead Free

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Time@Peak Reflow Temperature-Max (s) :

40

Current - Continuous Drain (Id) @ 25°C :

250mA 880mA

Rise Time :

6.5ns

Power Dissipation :

270mW

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

Factory Lead Time :

10 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

33pF @ 5V

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

12V

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Package / Case :

6-TSSOP, SC-88, SOT-363

Height :

1mm

Rds On (Max) @ Id, Vgs :

1.5 Ω @ 10mA, 4.5V

Number of Elements :

2

Transistor Element Material :

SILICON

Surface Mount :

yes

Current Rating :

250mA

Base Part Number :

NTJD4158C

Threshold Voltage :

1.2V

Vgs(th) (Max) @ Id :

1.5V @ 100μA

Operating Temperature :

-55°C~150°C TJ

Turn-Off Delay Time :

13.5 ns

Radiation Hardening :

No

Turn On Delay Time :

15 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

No SVHC

JESD-609 Code :

e3

Max Power Dissipation :

270mW

Fall Time (Typ) :

3.5 ns

Pin Count :

6

Continuous Drain Current (ID) :

880mA

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

6

Number of Pins :

6

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Dual

Terminal Finish :

Tin (Sn)

FET Type :

N and P-Channel

FET Feature :

Logic Level Gate

Resistance :

1.5Ohm

Drain to Source Breakdown Voltage :

-20V

Published :

2005

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

30V 20V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Width :

1.35mm

Length :

2.2mm

Pbfree Code :

yes