NTJD4152PT2G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Package / Case :

6-TSSOP, SC-88, SOT-363

Continuous Drain Current (ID) :

880mA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.26Ohm

Input Capacitance (Ciss) (Max) @ Vds :

155pF @ 20V

Drain Current-Max (Abs) (ID) :

0.88A

FET Feature :

Standard

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-PDSO-G6

Power - Max :

272mW

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

20V

Factory Lead Time :

11 Weeks

JESD-609 Code :

e3

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Max Power Dissipation :

272mW

Published :

2015

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

Gate Charge (Qg) (Max) @ Vgs :

2.2nC @ 4.5V

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

Number of Elements :

2

Number of Terminations :

6

ECCN Code :

EAR99

FET Type :

2 P-Channel (Dual)

Drain to Source Voltage (Vdss) :

20V

Terminal Finish :

Tin (Sn)

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

260m Ω @ 880mA, 4.5V

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Surface Mount :

yes