NTJD4152PT1

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Lifecycle Status :

ACTIVE (Last Updated: 23 hours ago)

Operating Temperature :

-55°C~150°C TJ

Radiation Hardening :

No

Drain to Source Voltage (Vdss) :

20V

JESD-609 Code :

e3

Published :

2000

Number of Terminations :

6

Input Capacitance (Ciss) (Max) @ Vds :

155pF @ 20V

Threshold Voltage :

-1.2V

Number of Pins :

6

RoHS Status :

ROHS3 Compliant

Height :

990.6μm

Package / Case :

6-TSSOP, SC-88, SOT-363

Resistance :

215mOhm

Peak Reflow Temperature (Cel) :

260

Number of Elements :

2

Drain Current-Max (Abs) (ID) :

0.88A

Length :

2.1844mm

Element Configuration :

Dual

Factory Lead Time :

11 Weeks

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

6.5 ns

Lead Free :

Lead Free

Power Dissipation :

272mW

Width :

1.3462mm

Terminal Form :

Gull wing

Continuous Drain Current (ID) :

880mA

Drain to Source Breakdown Voltage :

-20V

Current Rating :

-880mA

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Base Part Number :

NTJD4152P

Surface Mount :

yes

Voltage - Rated DC :

-20V

FET Feature :

Logic Level Gate

Terminal Finish :

Tin (Sn)

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Max Power Dissipation :

272mW

Gate Charge (Qg) (Max) @ Vgs :

2.2nC @ 4.5V

Pin Count :

6

Rise Time :

6.5ns

Gate to Source Voltage (Vgs) :

12V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Turn-Off Delay Time :

13.5 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

REACH SVHC :

No SVHC

FET Type :

2 P-Channel (Dual)

Time@Peak Reflow Temperature-Max (s) :

40

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

260m Ω @ 880mA, 4.5V

Mounting Type :

Surface Mount

Turn On Delay Time :

5.8 ns