NTJD4105CT4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Published :

2006

Drain to Source Voltage (Vdss) :

20V 8V

Max Power Dissipation :

270mW

Number of Elements :

2

Current - Continuous Drain (Id) @ 25°C :

630mA 775mA

Terminal Finish :

Tin (Sn)

Drain to Source Breakdown Voltage :

-8V

Gate to Source Voltage (Vgs) :

8V

Drain-source On Resistance-Max :

0.375Ohm

Power Dissipation :

270mW

Current Rating :

630mA

Feedback Cap-Max (Crss) :

5 pF

Qualification Status :

Not Qualified

RoHS Status :

RoHS Compliant

Turn-Off Delay Time :

50 ns

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

3nC @ 4.5V

Time@Peak Reflow Temperature-Max (s) :

40

Drain Current-Max (Abs) (ID) :

1.1A

Lead Free :

Lead Free

Fall Time (Typ) :

36 ns

Input Capacitance (Ciss) (Max) @ Vds :

46pF @ 20V

Base Part Number :

NTJD4105C

Number of Terminations :

6

HTS Code :

8541.21.00.95

Transistor Application :

SWITCHING

Number of Pins :

6

Rise Time :

23ns

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Peak Reflow Temperature (Cel) :

260

Operating Temperature :

-55°C~150°C TJ

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Element Configuration :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

yes

FET Type :

N and P-Channel

Terminal Form :

Gull wing

Pin Count :

6

Package / Case :

6-TSSOP, SC-88, SOT-363

Rds On (Max) @ Id, Vgs :

375m Ω @ 630mA, 4.5V

Reach Compliance Code :

Unknown

JESD-609 Code :

e3

Continuous Drain Current (ID) :

775mA

FET Feature :

Logic Level Gate

Transistor Element Material :

SILICON

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Mounting Type :

Surface Mount