NTHD5904NT3G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

2

Continuous Drain Current (ID) :

2.5A

Current - Continuous Drain (Id) @ 25°C :

2.5A Ta

Number of Terminations :

8

Time@Peak Reflow Temperature-Max (s) :

40

Vgs (Max) :

±8V

RoHS Status :

RoHS Compliant

Power Dissipation :

1.13W

Peak Reflow Temperature (Cel) :

260

Gate to Source Voltage (Vgs) :

8V

Drain-source On Resistance-Max :

0.065Ohm

Transistor Element Material :

SILICON

Power Dissipation-Max :

640mW Ta

Element Configuration :

Dual

FET Type :

N-Channel

JESD-609 Code :

e3

Fall Time (Typ) :

17 ns

Rise Time :

17ns

Voltage - Rated DC :

20V

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Current Rating :

3.3A

Number of Pins :

8

Package / Case :

8-SMD, Flat Lead

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

8

Terminal Form :

C BEND

Published :

2005

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

65m Ω @ 3.3A, 4.5V

Turn-Off Delay Time :

17 ns

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Qualification Status :

Not Qualified

Gate Charge (Qg) (Max) @ Vgs :

6nC @ 4.5V

Drain to Source Breakdown Voltage :

20V

ECCN Code :

EAR99

Lead Free :

Lead Free

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

465pF @ 16V

Terminal Finish :

Tin (Sn)

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V