NTHD4P02FT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±12V

Lead Free :

Lead Free

Radiation Hardening :

No

Pbfree Code :

yes

Current Rating :

-3A

Configuration :

SINGLE WITH BUILT-IN DIODE

Published :

2004

Number of Terminations :

8

Rds On (Max) @ Id, Vgs :

155m Ω @ 2.2A, 4.5V

Pulsed Drain Current-Max (IDM) :

9A

Transistor Application :

SWITCHING

FET Feature :

Schottky Diode (Isolated)

Peak Reflow Temperature (Cel) :

260

Number of Pins :

8

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Packaging :

Tape and Reel (TR)

Voltage - Rated DC :

-20V

Factory Lead Time :

8 Weeks

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

2.2A Tj

Gate Charge (Qg) (Max) @ Vgs :

6nC @ 4.5V

Number of Elements :

1

Power Dissipation-Max :

1.1W Tj

Pin Count :

8

Terminal Finish :

Tin (Sn)

Drain to Source Voltage (Vdss) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

12V

Resistance :

130mOhm

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Operating Temperature :

-55°C~150°C TJ

Turn-Off Delay Time :

33 ns

Terminal Form :

C BEND

FET Type :

P-Channel

Power Dissipation :

1.1W

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Drain to Source Breakdown Voltage :

-20V

Continuous Drain Current (ID) :

-2.2A

Surface Mount :

yes

Fall Time (Typ) :

13 ns

Input Capacitance (Ciss) (Max) @ Vds :

300pF @ 10V

Terminal Position :

Dual

Turn On Delay Time :

7 ns

Mounting Type :

Surface Mount

Rise Time :

13ns

Package / Case :

8-SMD, Flat Lead

Time@Peak Reflow Temperature-Max (s) :

40

JESD-609 Code :

e3

Transistor Element Material :

SILICON