NTHD4N02FT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

40

Vgs (Max) :

±12V

Qualification Status :

COMMERCIAL

Number of Elements :

1

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

20V

Pbfree Code :

No

JESD-30 Code :

R-XDSO-C8

Terminal Finish :

MATTE TIN

FET Feature :

Schottky Diode (Isolated)

Rds On (Max) @ Id, Vgs :

80m Ω @ 2.9A, 4.5V

Terminal Position :

Dual

Vgs(th) (Max) @ Id :

1.2V @ 250µA

JESD-609 Code :

e3

DS Breakdown Voltage-Min :

20V

Peak Reflow Temperature (Cel) :

260

Power Dissipation-Max :

910mW Tj

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Pin Count :

8

Configuration :

SINGLE WITH BUILT-IN DIODE

Feedback Cap-Max (Crss) :

50 pF

Package / Case :

8-SMD, Flat Lead

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Surface Mount :

yes

Input Capacitance (Ciss) (Max) @ Vds :

300pF @ 10V

Drain-source On Resistance-Max :

0.08Ohm

Terminal Form :

C BEND

Packaging :

Tape and Reel (TR)

Number of Terminations :

8

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

4nC @ 4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

2.9A

Current - Continuous Drain (Id) @ 25°C :

2.9A Tj

Transistor Application :

SWITCHING