NTE2991

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Mfr.Part #
NTE2991
Manufacturer
NTE Electronics, Inc.
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET PWR N-CH 55V 110A TO-220
Stock
1
In Stock :
1

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Manufacturer :
NTE Electronics, Inc.
Product Category :
Transistors - FETs, MOSFETs - Single
Drive Voltage (Max Rds On, Min Rds On) :
10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate to Source Voltage (Vgs) :
20 V
Package / Case :
TO-220-3
Power Dissipation (Max) :
200W (Tc)
Max Operating Temperature :
150 °C
Continuous Drain Current (ID) :
110 A
Input Capacitance (Ciss) (Max) @ Vds :
3247 pF @ 25 V
Number of Pins :
3
Technology :
MOSFET (Metal Oxide)
Weight :
453.59237 mg
Length :
25.4 mm
Mounting Type :
Through Hole
Package :
Bag
FET Type :
N-Channel
Drain to Source Voltage (Vdss) :
55 V
Manufacturer :
NTE Electronics
Supplier Device Package :
TO-220
Series :
-
Vgs (Max) :
±20V
Gate Charge (Qg) (Max) @ Vgs :
146 nC @ 10 V
Product Status :
Active
RoHS :
Compliant
Operating Temperature :
-55°C ~ 175°C (TJ)
Min Operating Temperature :
-55 °C
Drain to Source Resistance :
8 Ω
Mount :
Through Hole
FET Feature :
-
Rds On (Max) @ Id, Vgs :
8Ohm @ 62A, 10V
Height :
6.35 mm
Width :
6.35 mm
Current - Continuous Drain (Id) @ 25°C :
110A (Tc)
Introducing Transistors - FETs, MOSFETs - Single NTE Electronics, Inc. NTE2991 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3, Number of Pins:3, Mounting Type:Through Hole, Operating Temperature:-55°C ~ 175°C (TJ), NTE2991 pinout, NTE2991 datasheet PDF, NTE2991 amp .Beyond Transistors - FETs, MOSFETs - Single NTE Electronics, Inc. NTE2991 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

NTE Electronics, Inc. NTE2991


MOSFET (Metal Oxide) N-Channel 8Ohm @ 62A, 10V ±20V 3247 pF @ 25 V 146 nC @ 10 V 55 V TO-220-3

NTE2991 Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 3247 pF @ 25 V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 8 Ω.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20 VV.The transistor must receive a 55 V drain to source voltage (Vdss) in order to function.

NTE2991 Features


a continuous drain current (ID) of 110 A
single MOSFETs transistor is 8 Ω
a 55 V drain to source voltage (Vdss)


NTE2991 Applications


There are a lot of NTE Electronics, Inc.
NTE2991 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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