NTE2973

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - FETs, MOSFETs - Single

Supplier Device Package :

TO-3P

Package :

Bag

Manufacturer :

NTE Electronics

Power Dissipation (Max) :

275W (Tc)

Rds On (Max) @ Id, Vgs :

850mOhm @ 7A, 10V

Series :

-

Continuous Drain Current :

14(A)

REACH SVHC :

No SVHC

Polarity :

N

Package / Case :

TO-3P-3, SC-65-3

Rad Hardened :

No

Width :

95.25 mm

Nominal Vgs :

3 V

FET Feature :

-

Technology :

MOSFET (Metal Oxide)

Max Power Dissipation :

275 W

Vgs(th) (Max) @ Id :

4V @ 1mA

Operating Temperature Classification :

Military

Mount :

Through Hole

Continuous Drain Current (ID) :

14 A

Gate-Source Voltage (Max) :

±30(V)

Input Capacitance (Ciss) (Max) @ Vds :

2900 pF @ 25 V

Current - Continuous Drain (Id) @ 25°C :

14A (Tc)

RoHS :

Compliant

Height :

6.35 mm

Gate to Source Voltage (Vgs) :

30 V

FET Type :

N-Channel

Drive Voltage (Max Rds On, Min Rds On) :

10V

Power Dissipation :

275(W)

Threshold Voltage :

3 V

Operating Temperature :

-55°C ~ 150°C

Drain-Source On-Volt :

900(V)

Mounting Type :

Through Hole

Number of Pins :

3

Number of Elements :

1

Operating Temp Range :

-55C to 150C

Channel Mode :

Enhancement

Product Status :

Active

Drain to Source Voltage (Vdss) :

900 V

Min Operating Temperature :

-55 °C

Length :

165.1 mm

Package Type :

TO-3P

Vgs (Max) :

±30V

Max Operating Temperature :

150 °C

Type :

Power MOSFET

Resistance :

630 mΩ

Pin Count :

3 +Tab

Mounting :

Through Hole

Weight :

4.535924 g