NTE2960

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - FETs, MOSFETs - Arrays

Max Operating Temperature :

150 °C

Rds On (Max) @ Id, Vgs :

2Ohm @ 3A, 10V

Surface Mount :

No

Pulsed Drain Current-Max (IDM) :

21 A

Input Capacitance (Ciss) (Max) @ Vds :

1380pF @ 25V

Power - Max :

40W

RoHS :

Compliant

Manufacturer :

NTE Electronics

Drain to Source Voltage (Vdss) :

900V

Package :

Bag

Drain-source On Resistance-Max :

2 Ω

Vgs(th) (Max) @ Id :

4V @ 1mA

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

7A

Polarity/Channel Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

TO-220-3 Full Pack

FET Technology :

METAL-OXIDE SEMICONDUCTOR

DS Breakdown Voltage-Min :

900 V

Transistor Element Material :

SILICON

Reach Compliance Code :

Unknown

Series :

-

JESD-30 Code :

R-PSFM-T3

Product Status :

Active

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

7 A

Supplier Device Package :

TO-220 Full Pack

Operating Temperature :

-55°C ~ 150°C

Package Shape :

RECTANGULAR

FET Feature :

Standard

Number of Pins :

3

Number of Terminals :

3

Min Operating Temperature :

-55 °C

Qualification Status :

Not Qualified

Terminal Form :

THROUGH-HOLE

Case Connection :

Isolated

Number of Elements :

1

Mounting Type :

Through Hole

Terminal Position :

Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate to Source Voltage (Vgs) :

30 V

Gate Charge (Qg) (Max) @ Vgs :

-

Mount :

Through Hole

FET Type :

2 N-Channel