NTE2946
- Mfr.Part #
- NTE2946
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET-PWR N-CHAN ENHAN
- Stock
- 361
- In Stock :
- 361
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Qualification Status :
- Not Qualified
- Polarity/Channel Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 850mOhm @ 4A, 10V
- Pin Count :
- 3
- JEDEC-95 Code :
- TO-220AB
- Reach Compliance Code :
- Unknown
- FET Feature :
- Standard
- Additional Feature :
- High Reliability
- Number of Elements :
- 1
- FET Type :
- N-Channel
- Terminal Form :
- THROUGH-HOLE
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Input Capacitance (Ciss) (Max) @ Vds :
- 1510 pF @ 25 V
- Mounting Type :
- Through Hole
- Terminal Position :
- Single
- Series :
- -
- Transistor Application :
- SWITCHING
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- Manufacturer :
- NTE Electronics
- Number of Terminals :
- 3
- Package :
- Bag
- JESD-30 Code :
- R-PSFM-T3
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Avalanche Energy Rating (Eas) :
- 161 mJ
- Drain to Source Voltage (Vdss) :
- 500 V
- Supplier Device Package :
- TO-220 Full Pack
- Surface Mount :
- No
- Power Dissipation (Max) :
- 40W (Tc)
- Package / Case :
- TO-220-3 Full Pack
- Transistor Element Material :
- SILICON
- Case Connection :
- Isolated
- Technology :
- MOSFET (Metal Oxide)
- Operating Mode :
- ENHANCEMENT MODE
- Pulsed Drain Current-Max (IDM) :
- 32 A
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Drain-source On Resistance-Max :
- 0.85 Ω
- Package Shape :
- RECTANGULAR
- Vgs (Max) :
- ±20V
- Product Status :
- Active
- Current - Continuous Drain (Id) @ 25°C :
- 4.6A
- ECCN Code :
- EAR99
- Gate Charge (Qg) (Max) @ Vgs :
- 74 nC @ 10 V
- DS Breakdown Voltage-Min :
- 500 V
- Datasheets
- NTE2946

MOSFET (Metal Oxide) N-Channel 850mOhm @ 4A, 10V ±20V 1510 pF @ 25 V 74 nC @ 10 V 500 V TO-220-3 Full Pack
NTE2946 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 161 mJ.A device's maximum input capacitance is 1510 pF @ 25 V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its maximum pulsed drain current is 32 A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 500 V.To operate this transistor, you need to apply a 500 V drain to source voltage (Vdss).
NTE2946 Features
the avalanche energy rating (Eas) is 161 mJ
based on its rated peak drain current 32 A.
a 500 V drain to source voltage (Vdss)
NTE2946 Applications
There are a lot of NTE Electronics, Inc.
NTE2946 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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