NTE2946

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Single

Terminal Form :

THROUGH-HOLE

Manufacturer :

NTE Electronics

FET Technology :

METAL-OXIDE SEMICONDUCTOR

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

850mOhm @ 4A, 10V

Package :

Bag

Package Shape :

RECTANGULAR

Pin Count :

3

Gate Charge (Qg) (Max) @ Vgs :

74 nC @ 10 V

Current - Continuous Drain (Id) @ 25°C :

4.6A

Technology :

MOSFET (Metal Oxide)

Transistor Application :

SWITCHING

JEDEC-95 Code :

TO-220AB

Drain to Source Voltage (Vdss) :

500 V

Number of Terminals :

3

Number of Elements :

1

Supplier Device Package :

TO-220 Full Pack

ECCN Code :

EAR99

Configuration :

SINGLE WITH BUILT-IN DIODE

Series :

-

JESD-30 Code :

R-PSFM-T3

DS Breakdown Voltage-Min :

500 V

Input Capacitance (Ciss) (Max) @ Vds :

1510 pF @ 25 V

Pulsed Drain Current-Max (IDM) :

32 A

Surface Mount :

No

Operating Temperature :

-55°C ~ 150°C (TJ)

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

FET Feature :

Standard

Avalanche Energy Rating (Eas) :

161 mJ

Package / Case :

TO-220-3 Full Pack

Drive Voltage (Max Rds On, Min Rds On) :

10V

Additional Feature :

High Reliability

Mounting Type :

Through Hole

Case Connection :

Isolated

Vgs(th) (Max) @ Id :

4V @ 250µA

Vgs (Max) :

±20V

Drain-source On Resistance-Max :

0.85 Ω

Reach Compliance Code :

Unknown

Polarity/Channel Type :

N-Channel

Product Status :

Active

Qualification Status :

Not Qualified

Power Dissipation (Max) :

40W (Tc)