NTE2922

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation (Max) :

180W (Tc)

Vgs(th) (Max) @ Id :

4V @ 250µA

Package :

Bag

Series :

-

Operating Temperature :

-55°C ~ 150°C (TJ)

FET Feature :

-

Current - Continuous Drain (Id) @ 25°C :

16A (Tc)

Manufacturer :

NTE Electronics

Package / Case :

TO-3P-3, SC-65-3

Gate Charge (Qg) (Max) @ Vgs :

150 nC @ 10 V

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

400 V

Rds On (Max) @ Id, Vgs :

300mOhm @ 8.9A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

2600 pF @ 25 V

Technology :

MOSFET (Metal Oxide)

Drive Voltage (Max Rds On, Min Rds On) :

10V

Mounting Type :

Through Hole

Vgs (Max) :

±20V

Supplier Device Package :

TO-3P

Product Status :

Active