NTE2399

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - FETs, MOSFETs - Single

Polarity/Channel Type :

N-Channel

Package Type :

TO-220

Package :

Bag

Type :

Power MOSFET

Product Status :

Active

Rds On (Max) @ Id, Vgs :

5Ohm @ 1.9A, 10V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Avalanche Energy Rating (Eas) :

280 mJ

FET Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

80 nC @ 10 V

Drain-Source On-Volt :

1000(V)

Package Shape :

RECTANGULAR

Power Dissipation (Max) :

125W (Tc)

Technology :

MOSFET (Metal Oxide)

Qualification Status :

Not Qualified

Supplier Device Package :

TO-220

Surface Mount :

No

Mounting :

Through Hole

Transistor Element Material :

SILICON

Manufacturer :

NTE Electronics

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Polarity :

N

Reach Compliance Code :

Unknown

Mounting Type :

Through Hole

Pin Count :

3 +Tab

Operating Temperature Classification :

Military

Current - Continuous Drain (Id) @ 25°C :

3.1A (Tc)

Case Connection :

DRAIN

Drain to Source Voltage (Vdss) :

1000 V

Series :

-

Operating Mode :

ENHANCEMENT MODE

FET Feature :

-

Number of Terminals :

3

Gate-Source Voltage (Max) :

±20(V)

Drain-source On Resistance-Max :

0.5 Ω

Number of Elements :

1

Operating Temperature :

-55°C ~ 150°C (TJ)

Power Dissipation :

125(W)

Vgs(th) (Max) @ Id :

4V @ 250µA

Pulsed Drain Current-Max (IDM) :

12 A

Terminal Form :

THROUGH-HOLE

Input Capacitance (Ciss) (Max) @ Vds :

980 pF @ 25 V

JESD-30 Code :

R-PSFM-T3

Channel Mode :

Enhancement

Rad Hardened :

No

Continuous Drain Current :

3.1(A)

Drive Voltage (Max Rds On, Min Rds On) :

10V

Operating Temp Range :

-55C to 150C

ECCN Code :

EAR99

Vgs (Max) :

±20V

DS Breakdown Voltage-Min :

1000 V

Terminal Position :

Single

Package / Case :

TO-220-3