NTE2397

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - FETs, MOSFETs - Single

Type :

Power MOSFET

Rds On (Max) @ Id, Vgs :

550mOhm @ 6A, 10V

Terminal Position :

Single

Series :

-

Power Dissipation :

125(W)

Gate Charge (Qg) (Max) @ Vgs :

63 nC @ 10 V

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Elements :

1

Surface Mount :

No

Polarity :

N

Polarity/Channel Type :

N-Channel

Terminal Form :

THROUGH-HOLE

Transistor Element Material :

SILICON

Package Shape :

RECTANGULAR

Operating Temp Range :

-55C to 150C

Drain Current-Max (Abs) (ID) :

10 A

Avalanche Energy Rating (Eas) :

520 mJ

ECCN Code :

EAR99

Qualification Status :

Not Qualified

Manufacturer :

NTE Electronics

Package Type :

TO-220

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On, Min Rds On) :

10V

Supplier Device Package :

TO-220

Current - Continuous Drain (Id) @ 25°C :

10A (Tc)

JESD-30 Code :

R-PSFM-T3

Reach Compliance Code :

Unknown

Input Capacitance (Ciss) (Max) @ Vds :

1400 pF @ 25 V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Power Dissipation-Max (Abs) :

125 W

Channel Mode :

Enhancement

Operating Temperature :

-55°C ~ 150°C (TJ)

Configuration :

SINGLE WITH BUILT-IN DIODE

Pulsed Drain Current-Max (IDM) :

40 A

Pin Count :

3 +Tab

Case Connection :

DRAIN

Rad Hardened :

No

Additional Feature :

AVALANCHE RATED

Product Status :

Active

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current :

10(A)

Subcategory :

FET General Purpose Power

Package :

Bag

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

400 V

Drain-Source On-Volt :

400(V)

Vgs (Max) :

±20V

FET Type :

N-Channel

Operating Temperature Classification :

Military

Mounting Type :

Through Hole

Drain-source On Resistance-Max :

0.55 Ω

Drain to Source Voltage (Vdss) :

400 V

Mounting :

Through Hole

Power Dissipation (Max) :

125W (Tc)

Number of Terminals :

3

Package / Case :

TO-220-3

FET Feature :

-

Gate-Source Voltage (Max) :

±20(V)