NTE2395

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-220-3

Terminal Form :

THROUGH-HOLE

Turn-Off Delay Time :

45 ns

Operating Mode :

ENHANCEMENT MODE

Height :

15.494 mm

Technology :

MOSFET (Metal Oxide)

Schedule B :

8541290080

Threshold Voltage :

4 V

Number of Pins :

3

Configuration :

SINGLE WITH BUILT-IN DIODE

Turn-On Delay Time :

14 ns

Number of Terminals :

3

Surface Mount :

No

Gate to Source Voltage (Vgs) :

20 V

Reach Compliance Code :

Unknown

Subcategory :

FET General Purpose Power

Max Operating Temperature :

175 °C

Product Status :

Active

Max Power Dissipation :

150 W

Gate Charge (Qg) (Max) @ Vgs :

67 nC @ 10 V

Number of Elements :

1

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Package :

Bag

Mounting Type :

Through Hole

FET Feature :

-

REACH SVHC :

Unknown

Series :

-

Continuous Drain Current (ID) :

50 A

ECCN Code :

EAR99

Mount :

Through Hole

Drain to Source Voltage (Vdss) :

60 V

Case Connection :

DRAIN

Drain to Source Resistance :

28 mΩ

Vgs (Max) :

±20V

Power Dissipation :

150 W

RoHS :

Compliant

Transistor Element Material :

SILICON

Polarity/Channel Type :

N-Channel

Vgs(th) (Max) @ Id :

4V @ 250µA

Pulsed Drain Current-Max (IDM) :

200 A

Nominal Vgs :

2 V

JESD-30 Code :

R-PSFM-T3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

1900 pF @ 25 V

Length :

10.668 mm

Drive Voltage (Max Rds On, Min Rds On) :

10V

Package Shape :

RECTANGULAR

Rds On (Max) @ Id, Vgs :

28mOhm @ 31A, 10V

Current - Continuous Drain (Id) @ 25°C :

50A (Tc)

Supplier Device Package :

TO-220

Terminal Position :

Single

Qualification Status :

Not Qualified

Drain Current-Max (Abs) (ID) :

50 A

Element Configuration :

Single

Avalanche Energy Rating (Eas) :

100 mJ

Min Operating Temperature :

-55 °C

Power Dissipation-Max (Abs) :

150 W

Operating Temperature :

-55°C ~ 175°C (TJ)

Recovery Time :

180 ns

Manufacturer :

NTE Electronics

Power Dissipation (Max) :

150W (Tc)

Rise Time :

110 ns

DS Breakdown Voltage-Min :

60 V

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.028 Ω

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

60 V