NTE2394

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - FETs, MOSFETs - Single

FET Feature :

-

Vgs(th) (Max) @ Id :

4V @ 250µA

Terminal Position :

Single

Drive Voltage (Max Rds On, Min Rds On) :

10V

Drain-source On Resistance-Max :

0.4 Ω

Drain Current-Max (Abs) (ID) :

14 A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

500 V

FET Type :

N-Channel

Number of Terminals :

3

Input Capacitance (Ciss) (Max) @ Vds :

3000 pF @ 25 V

Current - Continuous Drain (Id) @ 25°C :

14A (Tc)

Package :

Bag

Reach Compliance Code :

Unknown

ECCN Code :

EAR99

Polarity/Channel Type :

N-Channel

Manufacturer :

NTE Electronics

Product Status :

Active

Package Shape :

RECTANGULAR

Gate Charge (Qg) (Max) @ Vgs :

120 nC @ 10 V

Mounting Type :

Through Hole

DS Breakdown Voltage-Min :

500 V

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

Surface Mount :

No

Operating Mode :

ENHANCEMENT MODE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code :

R-PSFM-T3

Pulsed Drain Current-Max (IDM) :

56 A

Terminal Form :

THROUGH-HOLE

Subcategory :

FET General Purpose Power

Rds On (Max) @ Id, Vgs :

400mOhm @ 7.9A, 10V

Qualification Status :

Not Qualified

Operating Temperature :

150°C (TJ)

Vgs (Max) :

±20V

Number of Elements :

1

Transistor Application :

SWITCHING

Supplier Device Package :

TO-3P

Series :

-

Power Dissipation (Max) :

180W (Tc)

Package / Case :

TO-3P-3, SC-65-3

Technology :

MOSFET (Metal Oxide)

Power Dissipation-Max (Abs) :

180 W