NTE2393

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminals :

3

Drive Voltage (Max Rds On, Min Rds On) :

10V

Drain Current-Max (Abs) (ID) :

9 A

Terminal Form :

THROUGH-HOLE

Surface Mount :

No

Terminal Position :

Single

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max (Abs) :

150 W

Pulsed Drain Current-Max (IDM) :

36 A

JESD-30 Code :

R-PSFM-T3

FET Feature :

-

Polarity/Channel Type :

N-Channel

Operating Temperature :

150°C (TJ)

Package Shape :

RECTANGULAR

Power Dissipation (Max) :

125W (Tc)

Vgs(th) (Max) @ Id :

4V @ 1mA

Package / Case :

TO-3P-3, SC-65-3

Qualification Status :

Not Qualified

DS Breakdown Voltage-Min :

500 V

Series :

-

Package :

Bag

Rds On (Max) @ Id, Vgs :

670mOhm @ 5A, 10V

Supplier Device Package :

TO-3P

Reach Compliance Code :

Unknown

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

10A (Tc)

Number of Elements :

1

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Type :

Through Hole

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Product Status :

Active

Subcategory :

FET General Purpose Power

FET Type :

N-Channel

Manufacturer :

NTE Electronics

Drain to Source Voltage (Vdss) :

500 V

Drain-source On Resistance-Max :

0.7 Ω

Vgs (Max) :

±20V