NTE2392

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Operating Temperature Classification :

Military

Surface Mount :

No

Mounting :

Through Hole

Drain to Source Breakdown Voltage :

100 V

Number of Elements :

1

Mounting Type :

Through Hole

Weight :

72.574779 g

Nominal Vgs :

4 V

Turn-On Delay Time :

35 ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation (Max) :

150W (Tc)

Subcategory :

FET General Purpose Power

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Element Configuration :

Single

Polarity/Channel Type :

N-Channel

Power Dissipation Ambient-Max :

150 W

Pulsed Drain Current-Max (IDM) :

160 A

Product Status :

Active

JESD-30 Code :

O-MBFM-P2

Series :

-

Current - Continuous Drain (Id) @ 25°C :

40A (Tc)

Width :

22.1996 mm

Max Power Dissipation :

150 W

Case Connection :

DRAIN

Pin Count :

2 +Tab

Min Operating Temperature :

-55 °C

Operating Temp Range :

-55C to 150C

Operating Temperature :

-55°C ~ 150°C (TJ)

Power Dissipation-Max (Abs) :

125 W

Drain to Source Voltage (Vdss) :

100 V

Package / Case :

TO-204AA, TO-3

Rad Hardened :

No

Polarity :

N

Manufacturer :

NTE Electronics

Package Type :

TO-3

Qualification Status :

Not Qualified

Type :

Power MOSFET

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

120 nC @ 10 V

Technology :

MOSFET (Metal Oxide)

Drain-source On Resistance-Max :

0.055 Ω

Drain to Source Resistance :

55 mΩ

Rds On (Max) @ Id, Vgs :

55mOhm @ 20A, 10V

Drain-Source On-Volt :

100(V)

Package Shape :

Round

ECCN Code :

EAR99

Number of Terminals :

2

Mount :

Through Hole

DS Breakdown Voltage-Min :

100 V

Vgs (Max) :

±20V

Channel Mode :

Enhancement

Supplier Device Package :

TO-3

Reach Compliance Code :

Unknown

Power Dissipation :

150 W

REACH SVHC :

Unknown

Length :

152.4 mm

Threshold Voltage :

4 V

Vgs(th) (Max) @ Id :

4V @ 250µA

Max Operating Temperature :

150 °C

Terminal Form :

PIN/PEG

Input Capacitance (Ciss) (Max) @ Vds :

3000 pF @ 25 V

RoHS :

Non-Compliant

Gate-Source Voltage (Max) :

±20(V)

Drive Voltage (Max Rds On, Min Rds On) :

10V

Transistor Application :

SWITCHING

Drain Current-Max (Abs) (ID) :

32 A

FET Feature :

-

Height :

8.89 mm

Terminal Position :

BOTTOM

Gate to Source Voltage (Vgs) :

20 V

Package :

Bag

Turn-Off Delay Time :

125 ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

FET Type :

N-Channel

Number of Pins :

2

JEDEC-95 Code :

TO-3

Continuous Drain Current :

40(A)

Continuous Drain Current (ID) :

40 A