NTE2387

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - FETs, MOSFETs - Single

Package :

Bag

Continuous Drain Current :

4(A)

Supplier Device Package :

TO-220

RoHS :

Compliant

Length :

10.668 mm

Channel Mode :

Enhancement

FET Feature :

-

Number of Pins :

3

Power Dissipation Ambient-Max :

125 W

Type :

Power MOSFET

DS Breakdown Voltage-Min :

800 V

JEDEC-95 Code :

TO-220AB

Operating Temperature :

-55°C ~ 150°C (TJ)

Reach Compliance Code :

Unknown

Qualification Status :

Not Qualified

Operating Temperature Classification :

Military

Gate to Source Voltage (Vgs) :

30 V

Drain-Source On-Volt :

800(V)

Nominal Vgs :

3 V

Package Type :

TO-220

Width :

76.2 mm

Power Dissipation :

125(W)

Vgs(th) (Max) @ Id :

4V @ 250µA

Product Status :

Active

Number of Terminals :

3

Max Operating Temperature :

150 °C

Rise Time :

25 ns

Mounting Type :

Through Hole

Surface Mount :

No

Max Power Dissipation :

125 W

Drain to Source Resistance :

3 Ω

Pin Count :

3 +Tab

Package Shape :

RECTANGULAR

Terminal Form :

THROUGH-HOLE

Package / Case :

TO-220-3

Gate-Source Voltage (Max) :

±30(V)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Drain to Source Voltage (Vdss) :

800 V

Element Configuration :

Single

Power Dissipation (Max) :

125W (Tc)

Turn-On Delay Time :

10 ns

Weight :

7.257478 g

Min Operating Temperature :

-55 °C

Rad Hardened :

No

Operating Mode :

ENHANCEMENT MODE

Operating Temp Range :

-55C to 150C

Drive Voltage (Max Rds On, Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

1300 pF @ 25 V

Turn-Off Delay Time :

130 ns

Case Connection :

DRAIN

Mount :

Through Hole

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Element Material :

SILICON

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Type :

N-Channel

Mounting :

Through Hole

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Polarity :

N

Configuration :

SINGLE WITH BUILT-IN DIODE

Height :

15.494 mm

Power Dissipation-Max (Abs) :

125 W

Drain Current-Max (Abs) (ID) :

4 A

REACH SVHC :

Unknown

HTS Code :

8541.29.00.95

Threshold Voltage :

3 V

Continuous Drain Current (ID) :

4 A

Drain to Source Breakdown Voltage :

800 V

Drain-source On Resistance-Max :

3 Ω

Polarity/Channel Type :

N-Channel

Rds On (Max) @ Id, Vgs :

3Ohm @ 1.5A, 10V

Manufacturer :

NTE Electronics

Series :

-

Current - Continuous Drain (Id) @ 25°C :

4.1A (Tc)

JESD-30 Code :

R-PSFM-T3

Pulsed Drain Current-Max (IDM) :

16 A

Gate Charge (Qg) (Max) @ Vgs :

78 nC @ 10 V

Terminal Position :

Single

Subcategory :

FET General Purpose Power