NTE2385

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminals :

3

Reach Compliance Code :

Unknown

Product Status :

Active

Drive Voltage (Max Rds On, Min Rds On) :

10V

Additional Feature :

AVALANCHE RATED

Manufacturer :

NTE Electronics

Avalanche Energy Rating (Eas) :

510 mJ

Current - Continuous Drain (Id) @ 25°C :

8A (Tc)

Drain-source On Resistance-Max :

0.85 Ω

Transistor Element Material :

SILICON

Subcategory :

FET General Purpose Power

Drain to Source Voltage (Vdss) :

500 V

Drain Current-Max (Abs) (ID) :

9 A

FET Type :

N-Channel

FET Feature :

-

Terminal Form :

THROUGH-HOLE

Mounting Type :

Through Hole

Number of Elements :

1

Terminal Position :

Single

Input Capacitance (Ciss) (Max) @ Vds :

1300 pF @ 25 V

Operating Temperature :

-55°C ~ 150°C (TJ)

JESD-30 Code :

R-PSFM-T3

Pin Count :

3

Package :

Bag

Gate Charge (Qg) (Max) @ Vgs :

63 nC @ 10 V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

32 A

Transistor Application :

SWITCHING

Surface Mount :

No

Vgs(th) (Max) @ Id :

4V @ 250µA

Technology :

MOSFET (Metal Oxide)

HTS Code :

8541.29.00.95

Package / Case :

TO-220-3

Package Shape :

RECTANGULAR

Rds On (Max) @ Id, Vgs :

850mOhm @ 4.8A, 10V

Qualification Status :

Not Qualified

JEDEC-95 Code :

TO-220AB

Power Dissipation Ambient-Max :

150 W

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Series :

-

Vgs (Max) :

±20V

Power Dissipation-Max (Abs) :

150 W

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Case Connection :

DRAIN

DS Breakdown Voltage-Min :

500 V

Polarity/Channel Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Supplier Device Package :

TO-220

Power Dissipation (Max) :

125W (Tc)