NTE2384
- Mfr.Part #
- NTE2384
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- MOSFET N-CHANNEL 900V 6A TO3
- Stock
- 54
- In Stock :
- 54
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain-source On Resistance-Max :
- 1.5 Ω
- Case Connection :
- DRAIN
- Supplier Device Package :
- TO-3
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs :
- 1.4Ohm @ 3A, 10V
- Terminal Position :
- BOTTOM
- Polarity :
- N
- FET Type :
- N-Channel
- Mounting :
- Through Hole
- Pulsed Drain Current-Max (IDM) :
- 24 A
- Current - Continuous Drain (Id) @ 25°C :
- 6A (Tc)
- Operating Temp Range :
- -55C to 150C
- JEDEC-95 Code :
- TO-3
- Surface Mount :
- No
- Package :
- Bag
- Drain Current-Max (Abs) (ID) :
- 6 A
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Transistor Element Material :
- SILICON
- Max Operating Temperature :
- 150 °C
- Transistor Application :
- SWITCHING
- Technology :
- MOSFET (Metal Oxide)
- Reach Compliance Code :
- Unknown
- Number of Pins :
- 3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Power Dissipation-Max (Abs) :
- 125 W
- Power Dissipation Ambient-Max :
- 125 W
- Power Dissipation :
- 180(W)
- Package Shape :
- Round
- FET Feature :
- -
- Type :
- Power MOSFET
- Product Status :
- Active
- Terminal Form :
- PIN/PEG
- Min Operating Temperature :
- -55 °C
- HTS Code :
- 8541.29.00.95
- Polarity/Channel Type :
- N-Channel
- Operating Mode :
- ENHANCEMENT MODE
- JESD-30 Code :
- O-MBFM-P2
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Operating Temperature Classification :
- Military
- DS Breakdown Voltage-Min :
- 800 V
- Drain-Source On-Volt :
- 800(V)
- Drain to Source Voltage (Vdss) :
- 900 V
- Manufacturer :
- NTE Electronics
- Continuous Drain Current :
- 6(A)
- Input Capacitance (Ciss) (Max) @ Vds :
- 2600 pF @ 25 V
- Channel Mode :
- Enhancement
- Continuous Drain Current (ID) :
- 6 A
- RoHS :
- Compliant
- Number of Terminals :
- 2
- Gate Charge (Qg) (Max) @ Vgs :
- 130 nC @ 10 V
- Subcategory :
- FET General Purpose Power
- Rad Hardened :
- No
- Gate to Source Voltage (Vgs) :
- 20 V
- Mount :
- Through Hole
- Package / Case :
- TO-204AA, TO-3
- Pin Count :
- 2 +Tab
- Gate-Source Voltage (Max) :
- ±20(V)
- Power Dissipation (Max) :
- 180W (Tc)
- Qualification Status :
- Not Qualified
- Mounting Type :
- Through Hole
- Number of Elements :
- 1
- Series :
- -
- Vgs (Max) :
- ±20V
- ECCN Code :
- EAR99
- Datasheets
- NTE2384

MOSFET (Metal Oxide) N-Channel 1.4Ohm @ 3A, 10V ±20V 2600 pF @ 25 V 130 nC @ 10 V 900 V TO-204AA, TO-3
NTE2384 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2600 pF @ 25 V.This device conducts a continuous drain current (ID) of 6 A, which is the maximum continuous current transistor can conduct.The drain current is the maximum continuous current this device can conduct, which is 6 A.Pulsed drain current is maximum rated peak drain current 24 A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20 V.A normal operation of the DS requires keeping the breakdown voltage above 800 V.This transistor requires a drain-source voltage (Vdss) of 900 V.
NTE2384 Features
a continuous drain current (ID) of 6 A
based on its rated peak drain current 24 A.
a 900 V drain to source voltage (Vdss)
NTE2384 Applications
There are a lot of NTE Electronics, Inc.
NTE2384 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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