NTE2383
- Mfr.Part #
- NTE2383
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET P-CH 100V 10.5A TO220
- Stock
- 44
- In Stock :
- 44
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Application :
- SWITCHING
- Additional Feature :
- High Reliability
- Case Connection :
- DRAIN
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Technology :
- MOSFET (Metal Oxide)
- Terminal Position :
- Single
- Channel Mode :
- Enhancement
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Input Capacitance (Ciss) (Max) @ Vds :
- 835 pF @ 25 V
- Drain Current-Max (Abs) (ID) :
- 8 A
- Series :
- -
- Power Dissipation (Max) :
- 75W (Tc)
- FET Feature :
- -
- Qualification Status :
- Not Qualified
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- DS Breakdown Voltage-Min :
- 100 V
- Manufacturer :
- NTE Electronics
- Pulsed Drain Current-Max (IDM) :
- 42 A
- Supplier Device Package :
- TO-220
- Product Status :
- Active
- Power Dissipation Ambient-Max :
- 75 W
- Power Dissipation-Max (Abs) :
- 75 W
- Surface Mount :
- No
- Polarity :
- P
- Package Type :
- TO-220
- Drain to Source Voltage (Vdss) :
- 100 V
- Reach Compliance Code :
- Unknown
- Package Shape :
- RECTANGULAR
- Rad Hardened :
- No
- Power Dissipation :
- 75(W)
- Polarity/Channel Type :
- P-Channel
- Package :
- Bag
- ECCN Code :
- EAR99
- Drain-source On Resistance-Max :
- 0.3 Ω
- Transistor Element Material :
- SILICON
- Current - Continuous Drain (Id) @ 25°C :
- 10.5A (Tc)
- Pin Count :
- 3 +Tab
- Number of Terminals :
- 3
- Number of Elements :
- 1
- Operating Mode :
- ENHANCEMENT MODE
- Rds On (Max) @ Id, Vgs :
- 300mOhm @ 5.3A, 10V
- Mounting Type :
- Through Hole
- JEDEC-95 Code :
- TO-220AB
- Package / Case :
- TO-220-3
- JESD-30 Code :
- R-PSFM-T3
- Vgs (Max) :
- ±20V
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- Drain-Source On-Volt :
- 100(V)
- Continuous Drain Current :
- 10.5(A)
- Operating Temp Range :
- -55C to 150C
- Subcategory :
- Other Transistors
- Type :
- Power MOSFET
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Gate-Source Voltage (Max) :
- ±20(V)
- Avalanche Energy Rating (Eas) :
- 510 mJ
- Gate Charge (Qg) (Max) @ Vgs :
- 58 nC @ 10 V
- Terminal Form :
- THROUGH-HOLE
- FET Type :
- P-Channel
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Mounting :
- Through Hole
- Operating Temperature Classification :
- Military
- Datasheets
- NTE2383

MOSFET (Metal Oxide) P-Channel 300mOhm @ 5.3A, 10V ±20V 835 pF @ 25 V 58 nC @ 10 V 100 V TO-220-3
NTE2383 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 510 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 835 pF @ 25 V maximal input capacitance.A device can conduct a maximum continuous current of [8 A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 42 A.The DS breakdown voltage should be maintained above 100 V to maintain normal operation.To operate this transistor, you will need a 100 V drain to source voltage (Vdss).
NTE2383 Features
the avalanche energy rating (Eas) is 510 mJ
based on its rated peak drain current 42 A.
a 100 V drain to source voltage (Vdss)
NTE2383 Applications
There are a lot of NTE Electronics, Inc.
NTE2383 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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