NTE2382

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

100 V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation Ambient-Max :

75 W

Supplier Device Package :

TO-220

Manufacturer :

NTE Electronics

Qualification Status :

Not Qualified

FET Feature :

-

Transistor Application :

SWITCHING

Subcategory :

FET General Purpose Power

Power Dissipation (Max) :

50W (Tc)

Polarity/Channel Type :

N-Channel

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

23 nC @ 10 V

Case Connection :

DRAIN

Package :

Bag

Current - Continuous Drain (Id) @ 25°C :

9.2A (Tc)

Additional Feature :

High Reliability

Mounting Type :

Through Hole

Rds On (Max) @ Id, Vgs :

270mOhm @ 4.6A, 10V

Product Status :

Active

Vgs(th) (Max) @ Id :

4V @ 250µA

Terminal Position :

Single

Reach Compliance Code :

Unknown

JEDEC-95 Code :

TO-220AB

Package Shape :

RECTANGULAR

FET Type :

N-Channel

Technology :

MOSFET (Metal Oxide)

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max (Abs) :

75 W

ECCN Code :

EAR99

Series :

-

Number of Terminals :

3

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Temperature :

-55°C ~ 150°C (TJ)

Drain-source On Resistance-Max :

0.27 Ω

Vgs (Max) :

±20V

Avalanche Energy Rating (Eas) :

36 mJ

JESD-30 Code :

R-PSFM-T3

Input Capacitance (Ciss) (Max) @ Vds :

400 pF @ 25 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

Pulsed Drain Current-Max (IDM) :

37 A

Drain Current-Max (Abs) (ID) :

8 A

Terminal Form :

THROUGH-HOLE

Surface Mount :

No

Drain to Source Voltage (Vdss) :

100 V

Pin Count :

3

Package / Case :

TO-220-3

Number of Elements :

1