NTE2381

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - FETs, MOSFETs - Single

FET Feature :

-

JEDEC-95 Code :

TO-220AB

Vgs(th) (Max) @ Id :

5V @ 250μA

Number of Terminals :

3

Package / Case :

TO-220-3

ECCN Code :

EAR99

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On, Min Rds On) :

10V

Nominal Vgs :

4.5 V

Pin Count :

3

Number of Elements :

1

Vgs (Max) :

±30V

Max Operating Temperature :

150 °C

Operating Temperature :

-65°C ~ 150°C

Min Operating Temperature :

-65 °C

FET Type :

P-Channel

Transistor Element Material :

SILICON

HTS Code :

8541.29.00.95

RoHS :

Compliant

Current - Continuous Drain (Id) @ 25°C :

2.7A (Tc)

Series :

-

Qualification Status :

Not Qualified

Terminal Position :

Single

Operating Mode :

ENHANCEMENT MODE

Power Dissipation Ambient-Max :

75 W

DS Breakdown Voltage-Min :

500 V

Drain-source On Resistance-Max :

6 Ω

JESD-30 Code :

R-PSFM-T3

Power Dissipation (Max) :

85W (Tc)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Manufacturer :

NTE Electronics

Max Power Dissipation :

75 W

Product Status :

Active

Supplier Device Package :

TO-220

Surface Mount :

No

Threshold Voltage :

4.5 V

Mount :

Through Hole

Reach Compliance Code :

Unknown

Drain Current-Max (Abs) (ID) :

2 A

Number of Pins :

3

Gate Charge (Qg) (Max) @ Vgs :

23 nC @ 10 V

Pulsed Drain Current-Max (IDM) :

8 A

Case Connection :

DRAIN

Terminal Form :

THROUGH-HOLE

Polarity/Channel Type :

P-Channel

Continuous Drain Current (ID) :

2 A

Mounting Type :

Through Hole

Rds On (Max) @ Id, Vgs :

4.9Ohm @ 1.35A, 10V

Package Shape :

RECTANGULAR

Package :

Bag

Subcategory :

Other Transistors

Drain to Source Voltage (Vdss) :

500 V

Power Dissipation-Max (Abs) :

75 W

Technology :

MOSFET (Metal Oxide)

REACH SVHC :

Unknown

Gate to Source Voltage (Vgs) :

20 V

Input Capacitance (Ciss) (Max) @ Vds :

660 pF @ 25 V