NTE2380

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - FETs, MOSFETs - Single

Nominal Vgs :

4 V

Input Capacitance (Ciss) (Max) @ Vds :

400 pF @ 25 V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-30 Code :

R-PSFM-T3

Continuous Drain Current (ID) :

2.5 A

Manufacturer :

NTE Electronics

Power Dissipation Ambient-Max :

75 W

FET Feature :

-

Drain to Source Voltage (Vdss) :

500 V

Operating Temperature :

-55°C ~ 150°C

ECCN Code :

EAR99

DS Breakdown Voltage-Min :

500 V

Pin Count :

3 +Tab

HTS Code :

8541.29.00.95

Operating Temp Range :

-55C to 150C

Threshold Voltage :

4 V

Package / Case :

TO-220-3

Drain to Source Resistance :

3 Ω

Case Connection :

DRAIN

Mounting Type :

Through Hole

Transistor Application :

SWITCHING

RoHS :

Compliant

Drain to Source Breakdown Voltage :

500 V

Height :

6.35 mm

Package Shape :

RECTANGULAR

Package :

Bag

Power Dissipation (Max) :

40W (Tc)

Reach Compliance Code :

Unknown

Operating Temperature Classification :

Military

Package Type :

TO-220

Continuous Drain Current :

2.5(A)

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Single

REACH SVHC :

No SVHC

Terminal Form :

THROUGH-HOLE

Number of Pins :

3

Weight :

68.038855 g

Drain Current-Max (Abs) (ID) :

2 A

Technology :

MOSFET (Metal Oxide)

Product Status :

Active

Max Operating Temperature :

150 °C

Transistor Element Material :

SILICON

Surface Mount :

No

Drain-Source On-Volt :

500(V)

Qualification Status :

Not Qualified

Mount :

Through Hole

Gate to Source Voltage (Vgs) :

20 V

FET Type :

N-Channel

Rad Hardened :

No

Length :

133.35 mm

Polarity/Channel Type :

N-Channel

Power Dissipation :

40(W)

Type :

Power MOSFET

Max Power Dissipation :

40 W

Polarity :

N

Drain-source On Resistance-Max :

3 Ω

Number of Terminals :

3

Power Dissipation-Max (Abs) :

75 W

Pulsed Drain Current-Max (IDM) :

10 A

Channel Mode :

Enhancement

Width :

38.1 mm

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

4V @ 250µA

Drive Voltage (Max Rds On, Min Rds On) :

10V

Gate-Source Voltage (Max) :

±20(V)

JEDEC-95 Code :

TO-220AB

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mounting :

Through Hole

Series :

-

Gate Charge (Qg) (Max) @ Vgs :

15 nC @ 10 V

Min Operating Temperature :

-55 °C

Supplier Device Package :

TO-220

Rds On (Max) @ Id, Vgs :

3Ohm @ 1A, 10V

Subcategory :

FET General Purpose Power

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

2.5A (Tc)