NTE2379

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - FETs, MOSFETs - Single

Gate-Source Voltage (Max) :

±20(V)

Type :

Power MOSFET

Package :

Bag

Mounting Type :

Through Hole

Product Status :

Active

Package Shape :

RECTANGULAR

Mounting :

Through Hole

Avalanche Energy Rating (Eas) :

570 mJ

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

1.2Ohm @ 3.7A, 10V

Drain-Source On-Volt :

600(V)

Pulsed Drain Current-Max (IDM) :

25 A

Operating Temperature Classification :

Military

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSFM-T3

Configuration :

SINGLE WITH BUILT-IN DIODE

Channel Mode :

Enhancement

Rad Hardened :

No

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

FET Feature :

-

Vgs(th) (Max) @ Id :

4V @ 250µA

Operating Temperature :

-55°C ~ 150°C (TJ)

Input Capacitance (Ciss) (Max) @ Vds :

1300 pF @ 25 V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Polarity/Channel Type :

N-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Terminals :

3

Package / Case :

TO-220-3

Surface Mount :

No

Drive Voltage (Max Rds On, Min Rds On) :

10V

Polarity :

N

Package Type :

TO-220

Case Connection :

DRAIN

FET Type :

N-Channel

DS Breakdown Voltage-Min :

600 V

Subcategory :

FET General Purpose Powers

Drain Current-Max (Abs) (ID) :

6.2 A

Drain to Source Voltage (Vdss) :

600 V

Current - Continuous Drain (Id) @ 25°C :

6.2A (Tc)

Operating Temp Range :

-55C to 150C

Series :

-

Supplier Device Package :

TO-220

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current :

6.2(A)

Drain-source On Resistance-Max :

1.2 Ω

Number of Elements :

1

Terminal Form :

THROUGH-HOLE

Pin Count :

3 +Tab

Gate Charge (Qg) (Max) @ Vgs :

60 nC @ 10 V

Power Dissipation :

125(W)

Reach Compliance Code :

Unknown

Qualification Status :

Not Qualified

Manufacturer :

NTE Electronics

Power Dissipation-Max (Abs) :

125 W

Power Dissipation (Max) :

125W (Tc)

Terminal Position :

Single