NTE2374

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

1300 pF @ 25 V

Transistor Application :

SWITCHING

Terminal Position :

Single

Pin Count :

3 +Tab

FET Feature :

-

Avalanche Energy Rating (Eas) :

580 mJ

Product Status :

Active

Rad Hardened :

No

Drive Voltage (Max Rds On, Min Rds On) :

10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

18A (Tc)

Pulsed Drain Current-Max (IDM) :

72 A

Surface Mount :

No

Package Type :

TO-220

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Elements :

1

Case Connection :

DRAIN

Drain to Source Voltage (Vdss) :

200 V

Supplier Device Package :

TO-220

Transistor Element Material :

SILICON

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Temperature :

-55°C ~ 150°C (TJ)

JESD-30 Code :

R-PSFM-T3

Channel Mode :

Enhancement

Rds On (Max) @ Id, Vgs :

180mOhm @ 31A, 10V

Operating Mode :

ENHANCEMENT MODE

Type :

Power MOSFET

Gate Charge (Qg) (Max) @ Vgs :

70 nC @ 10 V

Series :

-

Package Shape :

RECTANGULAR

Mounting Type :

Through Hole

Reach Compliance Code :

Unknown

Number of Terminals :

3

FET Type :

N-Channel

Continuous Drain Current :

18(A)

Package / Case :

TO-220-3

Vgs (Max) :

±20V

Mounting :

Through Hole

Manufacturer :

NTE Electronics

Power Dissipation (Max) :

125W (Tc)

Gate-Source Voltage (Max) :

±20(V)

Drain-source On Resistance-Max :

0.18 Ω

Configuration :

SINGLE WITH BUILT-IN DIODE

Polarity :

N

DS Breakdown Voltage-Min :

200 V

Qualification Status :

Not Qualified

ECCN Code :

EAR99

Operating Temp Range :

-55C to 150C

Polarity/Channel Type :

N-Channel

Drain-Source On-Volt :

200(V)

Power Dissipation :

125(W)

Operating Temperature Classification :

Military

Package :

Bag

Terminal Form :

THROUGH-HOLE