NTE2373

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation (Max) :

125W (Tc)

Current - Continuous Drain (Id) @ 25°C :

11A (Tc)

Operating Temperature :

-55°C ~ 150°C (TJ)

Power Dissipation :

125 W

Product Status :

Active

Vgs(th) (Max) @ Id :

4V @ 250µA

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

1200 pF @ 25 V

Manufacturer :

NTE Electronics

Drive Voltage (Max Rds On, Min Rds On) :

10V

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

44 nC @ 10 V

FET Type :

P-Channel

Threshold Voltage :

4 V

Series :

-

Min Operating Temperature :

-55 °C

Nominal Vgs :

2 V

Mount :

Through Hole

Gate to Source Voltage (Vgs) :

20 V

Number of Pins :

3

REACH SVHC :

Unknown

RoHS :

Compliant

Number of Channels :

1

Supplier Device Package :

TO-220

Recovery Time :

300 ns

Continuous Drain Current (ID) :

11 A

Rds On (Max) @ Id, Vgs :

500mOhm @ 6.6A, 10V

Technology :

MOSFET (Metal Oxide)

Max Operating Temperature :

150 °C

FET Feature :

-

Package / Case :

TO-220-3

Drain to Source Resistance :

500 mΩ

Drain to Source Voltage (Vdss) :

-200 V

Package :

Bag

Max Power Dissipation :

125 W