NTE2371

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain to Source Voltage (Vdss) :

100 V

Input Capacitance (Ciss) (Max) @ Vds :

1400 pF @ 25 V

Power Dissipation (Max) :

150W (Tc)

Package :

Bag

Technology :

MOSFET (Metal Oxide)

Manufacturer :

NTE Electronics

Rds On (Max) @ Id, Vgs :

200mOhm @ 11A, 10V

FET Type :

P-Channel

Drive Voltage (Max Rds On, Min Rds On) :

10V

Package / Case :

TO-220-3

Supplier Device Package :

TO-220

FET Feature :

-

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

61 nC @ 10 V

Operating Temperature :

-55°C ~ 175°C (TJ)

Product Status :

Active

Current - Continuous Drain (Id) @ 25°C :

19A (Tc)

Mounting Type :

Through Hole

Series :

-