NTE108-1

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - RF

Frequency - Transition :

600MHz

Terminal Form :

Wire

Series :

-

JESD-30 Code :

O-PBCY-W3

Power - Max :

625mW

Surface Mount :

No

Subcategory :

Other Transistors

Mounting Type :

Through Hole

Power Dissipation-Max (Abs) :

0.625 W

Polarity/Channel Type :

NPN

Collector-Emitter Voltage-Max :

15 V

Gain :

15dB

Package Shape :

Round

Manufacturer :

NTE Electronics

Product Status :

Active

Transistor Element Material :

SILICON

Package :

Bag

Reach Compliance Code :

Unknown

Supplier Device Package :

TO-106

Number of Elements :

1

Transistor Type :

NPN

Package / Case :

TO-106-3 Domed

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 8mA, 10V

Terminal Position :

BOTTOM

Collector Current-Max (IC) :

0.05 A

Operating Temperature :

-55°C ~ 150°C (TJ)

Qualification Status :

Not Qualified

Voltage - Collector Emitter Breakdown (Max) :

15V

Configuration :

Single

ECCN Code :

EAR99

Noise Figure (dB Typ @ f) :

6dB @ 60MHz

JEDEC-95 Code :

TO-106

Transistor Application :

AMPLIFIER

Pin Count :

3

Current - Collector (Ic) (Max) :

50mA

HTS Code :

8541.21.00.75

DC Current Gain-Min (hFE) :

20

Number of Terminals :

3