NSS20601CF8T1G
- Mfr.Part #
- NSS20601CF8T1G
- Manufacturer
- onsemi
- Package / Case
- 8-SMD, Flat Lead
- Datasheet
- Download
- Description
- TRANS NPN 20V 6A CHIPFET
- Stock
- 2,214
- In Stock :
- 2,214
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Tape and Reel (TR)
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation :
- 1.4W
- hFE Min :
- 200
- Turn On Time-Max (ton) :
- 240ns
- Transistor Type :
- NPN
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- Number of Pins :
- 8
- Base Part Number :
- NSS20601
- Vce Saturation (Max) @ Ib, Ic :
- 130mV @ 400mA, 4A
- Published :
- 2007
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transition Frequency :
- 140MHz
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Breakdown Voltage :
- 20V
- Lead Free :
- Lead Free
- Surface Mount :
- yes
- Frequency :
- 140MHz
- Collector Base Voltage (VCBO) :
- 20V
- Max Power Dissipation :
- 1.4W
- Element Configuration :
- Single
- Max Collector Current :
- 6A
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 6V
- Number of Terminations :
- 8
- Gain Bandwidth Product :
- 140MHz
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- SWITCHING
- Terminal Finish :
- Tin (Sn)
- Transistor Element Material :
- SILICON
- Halogen Free :
- Halogen Free
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 1A 2V
- Collector Emitter Voltage (VCEO) :
- 20V
- JESD-609 Code :
- e3
- Polarity/Channel Type :
- NPN
- Terminal Position :
- Dual
- Terminal Form :
- C BEND
- Pin Count :
- 8
- Package / Case :
- 8-SMD, Flat Lead
- Collector Emitter Breakdown Voltage :
- 20V
- Power - Max :
- 830mW
- Factory Lead Time :
- 19 Weeks
- Datasheets
- NSS20601CF8T1G

NPN -55°C~150°C TJ 100nA ICBO 1 Elements 8 Terminations SILICON NPN 8-SMD, Flat Lead Tape & Reel (TR) Surface Mount
NSS20601CF8T1G Overview
DC current gain in this device equals 200 @ 1A 2V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 130mV @ 400mA, 4A.An emitter's base voltage can be kept at 6V to gain high efficiency.As a result, the part has a transition frequency of 140MHz.Breakdown input voltage is 20V volts.In extreme cases, the collector current can be as low as 6A volts.
NSS20601CF8T1G Features
the DC current gain for this device is 200 @ 1A 2V
the vce saturation(Max) is 130mV @ 400mA, 4A
the emitter base voltage is kept at 6V
a transition frequency of 140MHz
NSS20601CF8T1G Applications
There are a lot of ON Semiconductor
NSS20601CF8T1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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