NSS20200W6T1G
- Mfr.Part #
- NSS20200W6T1G
- Manufacturer
- onsemi
- Package / Case
- 6-TSSOP, SC-88, SOT-363
- Datasheet
- Download
- Description
- TRANS PNP 20V 2A SC88/SC70-6
- Stock
- 29,956
- In Stock :
- 29,956
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Application :
- SWITCHING
- Configuration :
- Single
- Surface Mount :
- yes
- Mounting Type :
- Surface Mount
- Current - Collector (Ic) (Max) :
- 2A
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Frequency - Transition :
- 100MHz
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transition Frequency :
- 100MHz
- Terminal Position :
- Dual
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 1A 2V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Packaging :
- Tape and Reel (TR)
- Power - Max :
- 555mW
- Pin Count :
- 6
- Number of Elements :
- 1
- Pbfree Code :
- yes
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Type :
- PNP
- Number of Terminations :
- 6
- Turn On Time-Max (ton) :
- 165ns
- Terminal Form :
- Gull wing
- Terminal Finish :
- MATTE TIN
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- PNP
- Voltage - Collector Emitter Breakdown (Max) :
- 20V
- Turn Off Time-Max (toff) :
- 445ns
- Package / Case :
- 6-TSSOP, SC-88, SOT-363
- JESD-30 Code :
- R-PDSO-G6
- Vce Saturation (Max) @ Ib, Ic :
- 215mV @ 20mA, 2A
- Qualification Status :
- COMMERCIAL
- Datasheets
- NSS20200W6T1G

PNP -55°C~150°C TJ 100nA ICBO 1 Elements 6 Terminations SILICON PNP 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Surface Mount
NSS20200W6T1G Overview
This device has a DC current gain of 200 @ 1A 2V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 215mV @ 20mA, 2A means Ic has reached its maximum value(saturated).As you can see, the part has a transition frequency of 100MHz.Collector Emitter Breakdown occurs at 20VV - Maximum voltage.
NSS20200W6T1G Features
the DC current gain for this device is 200 @ 1A 2V
the vce saturation(Max) is 215mV @ 20mA, 2A
a transition frequency of 100MHz
NSS20200W6T1G Applications
There are a lot of Rochester Electronics, LLC
NSS20200W6T1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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