NSS20101JT1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Gain Bandwidth Product :

350MHz

Emitter Base Voltage (VEBO) :

6V

Transition Frequency :

350MHz

Number of Elements :

1

Polarity/Channel Type :

NPN

Pin Count :

3

Factory Lead Time :

4 Weeks

Collector Emitter Saturation Voltage :

220mV

Published :

2008

Transistor Element Material :

SILICON

Terminal Form :

Flat

Halogen Free :

Halogen Free

Base Part Number :

NSS20101

Terminal Position :

Dual

Packaging :

Tape and Reel (TR)

Current - Collector (Ic) (Max) :

1A

Max Collector Current :

2A

Element Configuration :

Single

Power Dissipation :

300mW

Collector Emitter Voltage (VCEO) :

20V

Vce Saturation (Max) @ Ib, Ic :

220mV @ 100mA, 1A

ECCN Code :

EAR99

Input Capacitance :

40pF

Current - Collector Cutoff (Max) :

100nA ICBO

Pbfree Code :

yes

Collector Emitter Breakdown Voltage :

20V

Package / Case :

SC-89, SOT-490

Collector Base Voltage (VCBO) :

40V

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e3

Number of Terminations :

3

Frequency :

350MHz

Mounting Type :

Surface Mount

Contact Plating :

Tin

Surface Mount :

yes

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 100mA 2V

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

No SVHC

Lead Free :

Lead Free

Transistor Application :

SWITCHING

Radiation Hardening :

No

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Number of Pins :

3

Transistor Type :

NPN

Max Power Dissipation :

300mW

Max Breakdown Voltage :

45V