NSS20200LT1G
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- Mfr.Part #
- NSS20200LT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 20V 2A SOT23-3
- Stock
- 17,433
- In Stock ：
- 17,433
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 20V
- Number of Pins :
- 3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Halogen Free :
- Halogen Free
- Number of Terminations :
- 3
- Number of Elements :
- 1
- Pin Count :
- 3
- Element Configuration :
- Single
- hFE Min :
- 250
- Max Breakdown Voltage :
- 20V
- Packaging :
- Tape and Reel (TR)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 500mA 2V
- Collector Emitter Saturation Voltage :
- -130mV
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Terminal Position :
- Dual
- Contact Plating :
- Tin
- Power - Max :
- 460mW
- Polarity/Channel Type :
- PNP
- ECCN Code :
- EAR99
- Collector Emitter Voltage (VCEO) :
- 20V
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 180mV @ 200mA, 2A
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Terminal Form :
- Gull wing
- Transition Frequency :
- 100MHz
- Max Collector Current :
- 2A
- Lead Free :
- Lead Free
- Gain Bandwidth Product :
- 100MHz
- Surface Mount :
- yes
- Emitter Base Voltage (VEBO) :
- 7V
- JESD-609 Code :
- e3
- REACH SVHC :
- No SVHC
- Pbfree Code :
- yes
- Width :
- 1.4mm
- Length :
- 3.04mm
- Transistor Type :
- PNP
- Frequency :
- 100MHz
- Published :
- 2005
- Collector Base Voltage (VCBO) :
- 20V
- Operating Temperature :
- -55°C~150°C TJ
- Factory Lead Time :
- 8 Weeks
- Radiation Hardening :
- No
- Mounting Type :
- Surface Mount
- Transistor Application :
- SWITCHING
- Base Part Number :
- NSS20200
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 460mW
- Power Dissipation :
- 540mW
- Height :
- 1.01mm
- Peak Reflow Temperature (Cel) :
- 260
- Datasheets
- NSS20200LT1G
PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
NSS20200LT1G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 250 @ 500mA 2V.With a collector emitter saturation voltage of -130mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 180mV @ 200mA, 2A.If the emitter base voltage is kept at 7V, a high level of efficiency can be achieved.A transition frequency of 100MHz is present in the part.There is a breakdown input voltage of 20V volts that it can take.Collector current can be as low as 2A volts at its maximum.
NSS20200LT1G Features
the DC current gain for this device is 250 @ 500mA 2V
a collector emitter saturation voltage of -130mV
the vce saturation(Max) is 180mV @ 200mA, 2A
the emitter base voltage is kept at 7V
a transition frequency of 100MHz
NSS20200LT1G Applications
There are a lot of ON Semiconductor
NSS20200LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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