NSS20300MR6T1G
- Mfr.Part #
- NSS20300MR6T1G
- Manufacturer
- onsemi
- Package / Case
- SOT-23-6
- Datasheet
- Download
- Description
- TRANS PNP 20V 3A 6TSOP
- Stock
- 2,525
- In Stock :
- 2,525
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- Element Configuration :
- Single
- Polarity/Channel Type :
- PNP
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Transistor Type :
- PNP
- Peak Reflow Temperature (Cel) :
- 260
- Surface Mount :
- yes
- Vce Saturation (Max) @ Ib, Ic :
- 320mV @ 20mA, 2A
- Transistor Element Material :
- SILICON
- Halogen Free :
- Halogen Free
- Lead Free :
- Lead Free
- Base Part Number :
- NSS20300
- Collector Emitter Saturation Voltage :
- -250mV
- Voltage - Rated DC :
- -20V
- Transistor Application :
- SWITCHING
- Max Breakdown Voltage :
- 20V
- Pin Count :
- 6
- Number of Terminations :
- 6
- Operating Temperature :
- -55°C~150°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Pins :
- 6
- Lifecycle Status :
- ACTIVE (Last Updated: 22 hours ago)
- Transition Frequency :
- 100MHz
- Power - Max :
- 545mW
- hFE Min :
- 100
- Terminal Finish :
- Tin (Sn)
- Package / Case :
- SOT-23-6
- Emitter Base Voltage (VEBO) :
- -6V
- Max Collector Current :
- 3A
- Gain Bandwidth Product :
- 100MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1.5A 2V
- Packaging :
- Tape and Reel (TR)
- Current - Collector Cutoff (Max) :
- 100nA
- Collector Emitter Voltage (VCEO) :
- 20V
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 2 Weeks
- JESD-609 Code :
- e3
- Current Rating :
- -3A
- Published :
- 2006
- Frequency :
- 100MHz
- Power Dissipation :
- 106W
- Collector Emitter Breakdown Voltage :
- 20V
- Terminal Form :
- Gull wing
- Number of Elements :
- 1
- Max Power Dissipation :
- 545mW
- Terminal Position :
- Dual
- Collector Base Voltage (VCBO) :
- 30V
- Datasheets
- NSS20300MR6T1G

PNP -55°C~150°C TJ 100nA 1 Elements 6 Terminations SILICON PNP SOT-23-6 Tape & Reel (TR) Surface Mount
NSS20300MR6T1G Overview
This device has a DC current gain of 100 @ 1.5A 2V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of -250mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at -6V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -3A.In this part, there is a transition frequency of 100MHz.As a result, it can handle voltages as low as 20V volts.The maximum collector current is 3A volts.
NSS20300MR6T1G Features
the DC current gain for this device is 100 @ 1.5A 2V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 320mV @ 20mA, 2A
the emitter base voltage is kept at -6V
the current rating of this device is -3A
a transition frequency of 100MHz
NSS20300MR6T1G Applications
There are a lot of ON Semiconductor
NSS20300MR6T1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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