NSS20501UW3T2G

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Mfr.Part #
NSS20501UW3T2G
Manufacturer
onsemi
Package / Case
3-WDFN Exposed Pad
Datasheet
Download
Description
TRANS NPN 20V 5A 3WDFN
Stock
69
In Stock :
69

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Factory Lead Time :
2 Weeks
Element Configuration :
Single
Number of Terminations :
3
Number of Elements :
1
Current - Collector Cutoff (Max) :
100nA ICBO
Operating Temperature :
-55°C~150°C TJ
Mounting Type :
Surface Mount
Terminal Position :
Dual
Pbfree Code :
yes
hFE Min :
200
Max Power Dissipation :
1.5W
Packaging :
Tape and Reel (TR)
Transistor Application :
SWITCHING
Lifecycle Status :
ACTIVE (Last Updated: 4 days ago)
Power - Max :
875mW
Case Connection :
COLLECTOR
Max Breakdown Voltage :
20V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Type :
NPN
Collector Base Voltage (VCBO) :
20V
Transistor Element Material :
SILICON
Lead Free :
Lead Free
Gain Bandwidth Product :
150MHz
JESD-609 Code :
e3
Terminal Finish :
Tin (Sn)
RoHS Status :
ROHS3 Compliant
ECCN Code :
EAR99
Turn Off Time-Max (toff) :
190ns
Collector Emitter Breakdown Voltage :
20V
Vce Saturation (Max) @ Ib, Ic :
125mV @ 400mA, 4A
Collector Emitter Voltage (VCEO) :
20V
Number of Pins :
3
Published :
2007
Halogen Free :
Halogen Free
Turn On Time-Max (ton) :
600ns
Emitter Base Voltage (VEBO) :
6V
Polarity/Channel Type :
NPN
Max Collector Current :
5A
Surface Mount :
yes
Transition Frequency :
150MHz
Base Part Number :
NSS20501
Package / Case :
3-WDFN Exposed Pad
Radiation Hardening :
No
Pin Count :
3
DC Current Gain (hFE) (Min) @ Ic, Vce :
200 @ 2A 2V
Datasheets
NSS20501UW3T2G
Introducing Transistors - Bipolar (BJT) - Single onsemi NSS20501UW3T2G from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Number of Pins:3, Base Part Number:NSS20501, Package / Case:3-WDFN Exposed Pad, NSS20501UW3T2G pinout, NSS20501UW3T2G datasheet PDF, NSS20501UW3T2G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi NSS20501UW3T2G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NSS20501UW3T2G


NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN 3-WDFN Exposed Pad Tape & Reel (TR) Surface Mount

NSS20501UW3T2G Overview


In this device, the DC current gain is 200 @ 2A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 125mV @ 400mA, 4A.Keeping the emitter base voltage at 6V allows for a high level of efficiency.150MHz is present in the transition frequency.An input voltage of 20V volts is the breakdown voltage.Maximum collector currents can be below 5A volts.

NSS20501UW3T2G Features


the DC current gain for this device is 200 @ 2A 2V
the vce saturation(Max) is 125mV @ 400mA, 4A
the emitter base voltage is kept at 6V
a transition frequency of 150MHz


NSS20501UW3T2G Applications


There are a lot of ON Semiconductor
NSS20501UW3T2G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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