NSS20201LT1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Transistor Element Material :

SILICON

Radiation Hardening :

No

Max Power Dissipation :

540mW

Packaging :

Tape and Reel (TR)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Power - Max :

460mW

Lead Free :

Lead Free

Number of Pins :

3

Published :

2007

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Factory Lead Time :

8 Weeks

JESD-609 Code :

e3

Number of Elements :

1

Collector Emitter Saturation Voltage :

4mV

Mounting Type :

Surface Mount

Number of Terminations :

3

Peak Reflow Temperature (Cel) :

260

Pin Count :

3

RoHS Status :

ROHS3 Compliant

Power Dissipation :

540mW

hFE Min :

200

Halogen Free :

Halogen Free

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 500mA 2V

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Polarity/Channel Type :

NPN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Emitter Base Voltage (VEBO) :

6V

Max Collector Current :

2A

Base Part Number :

NSS20201

Collector Emitter Breakdown Voltage :

20V

Collector Base Voltage (VCBO) :

20V

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Form :

Gull wing

Terminal Position :

Dual

Contact Plating :

Tin

Element Configuration :

Single

Gain Bandwidth Product :

150MHz

Collector Emitter Voltage (VCEO) :

20V

Transition Frequency :

150MHz

Pbfree Code :

yes

Vce Saturation (Max) @ Ib, Ic :

100mV @ 200mA, 2A

Transistor Type :

NPN

ECCN Code :

EAR99

Current - Collector Cutoff (Max) :

100nA ICBO

Max Breakdown Voltage :

20V

Frequency :

150MHz

Surface Mount :

yes