NJVMJD45H11D3T4G

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Mfr.Part #
NJVMJD45H11D3T4G
Manufacturer
onsemi
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
TRANS PNP 80V 8A DPAK
Stock
9,019
In Stock :
9,019

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Lifecycle Status :
ACTIVE (Last Updated: 1 week ago)
Case Connection :
COLLECTOR
Terminal Finish :
Tin (Sn)
DC Current Gain (hFE) (Min) @ Ic, Vce :
40 @ 4A 1V
Collector Emitter Breakdown Voltage :
80V
Published :
2006
Operating Temperature :
-55°C~150°C TJ
Transistor Type :
PNP
Mounting Type :
Surface Mount
Number of Elements :
1
Transistor Application :
SWITCHING
Collector Emitter Voltage (VCEO) :
1V
Current - Collector Cutoff (Max) :
1μA
Vce Saturation (Max) @ Ib, Ic :
1V @ 400mA, 8A
Power - Max :
20W
Transition Frequency :
90MHz
Packaging :
Tape and Reel (TR)
Terminal Form :
Gull wing
Pbfree Code :
yes
Number of Terminations :
3
Frequency - Transition :
90MHz
Reference Standard :
AEC-Q101
Factory Lead Time :
8 Weeks
JESD-30 Code :
R-PSSO-G3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mount :
Surface Mount
Max Collector Current :
8A
RoHS Status :
ROHS3 Compliant
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Polarity/Channel Type :
PNP
JESD-609 Code :
e3
Lead Free :
Lead Free
Configuration :
Single
Transistor Element Material :
SILICON
Max Power Dissipation :
20W
Reach Compliance Code :
not_compliant
Terminal Position :
Single
Datasheets
NJVMJD45H11D3T4G
Introducing Transistors - Bipolar (BJT) - Single onsemi NJVMJD45H11D3T4G from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Number of Terminations:3, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, NJVMJD45H11D3T4G pinout, NJVMJD45H11D3T4G datasheet PDF, NJVMJD45H11D3T4G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi NJVMJD45H11D3T4G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NJVMJD45H11D3T4G


PNP -55°C~150°C TJ 1μA 1 Elements 3 Terminations SILICON PNP TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount

NJVMJD45H11D3T4G Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 40 @ 4A 1V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.There is a transition frequency of 90MHz in the part.When collector current reaches its maximum, it can reach 8A volts.

NJVMJD45H11D3T4G Features


the DC current gain for this device is 40 @ 4A 1V
the vce saturation(Max) is 1V @ 400mA, 8A
a transition frequency of 90MHz


NJVMJD45H11D3T4G Applications


There are a lot of ON Semiconductor
NJVMJD45H11D3T4G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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