NJVMJD117T4G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Number of Pins :

3

Max Collector Current :

2A

Max Power Dissipation :

1.75W

Terminal Finish :

Tin (Sn)

Factory Lead Time :

8 Weeks

Element Configuration :

Single

Emitter Base Voltage (VEBO) :

5V

Published :

2006

Collector Emitter Breakdown Voltage :

100V

Vce Saturation (Max) @ Ib, Ic :

3V @ 40mA, 4A

RoHS Status :

ROHS3 Compliant

Current - Collector Cutoff (Max) :

20μA

Polarity :

PNP

Transition Frequency :

25MHz

JESD-609 Code :

e3

Transistor Type :

PNP - Darlington

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Power - Max :

1.75W

Mounting Type :

Surface Mount

DC Current Gain (hFE) (Min) @ Ic, Vce :

1000 @ 2A 3V

Operating Temperature :

-65°C~150°C TJ

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Saturation Voltage :

2V

Collector Base Voltage (VCBO) :

100V

Surface Mount :

yes

Pbfree Code :

yes

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Lead Free :

Lead Free

Radiation Hardening :

No

Frequency - Transition :

25MHz

Pin Count :

3

Halogen Free :

Halogen Free

Number of Elements :

1

ECCN Code :

EAR99

Base Part Number :

MJD117

Collector Emitter Voltage (VCEO) :

100V