NJVMJD117T4G
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- Mfr.Part #
- NJVMJD117T4G
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP DARL 100V 2A DPAK
- Stock
- 9,585
- In Stock ：
- 9,585
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 2A
- Published :
- 2006
- Factory Lead Time :
- 8 Weeks
- Collector Emitter Voltage (VCEO) :
- 100V
- Terminal Finish :
- Tin (Sn)
- Current - Collector Cutoff (Max) :
- 20μA
- Packaging :
- Tape and Reel (TR)
- Pin Count :
- 3
- Collector Emitter Saturation Voltage :
- 2V
- Collector Base Voltage (VCBO) :
- 100V
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 40mA, 4A
- Max Power Dissipation :
- 1.75W
- Halogen Free :
- Halogen Free
- Collector Emitter Breakdown Voltage :
- 100V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Radiation Hardening :
- No
- Operating Temperature :
- -65°C~150°C TJ
- RoHS Status :
- ROHS3 Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 2A 3V
- Transition Frequency :
- 25MHz
- Pbfree Code :
- yes
- Number of Elements :
- 1
- Polarity :
- PNP
- Number of Pins :
- 3
- Base Part Number :
- MJD117
- Element Configuration :
- Single
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- Surface Mount :
- yes
- Lead Free :
- Lead Free
- Mounting Type :
- Surface Mount
- JESD-609 Code :
- e3
- Frequency - Transition :
- 25MHz
- Power - Max :
- 1.75W
- Emitter Base Voltage (VEBO) :
- 5V
- ECCN Code :
- EAR99
- Transistor Type :
- PNP - Darlington
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- NJVMJD117T4G
NJVMJD117T4G Documents
PNP - Darlington -65°C~150°C TJ 20μA 1 Elements TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
NJVMJD117T4G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 1000 @ 2A 3V.With a collector emitter saturation voltage of 2V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 3V @ 40mA, 4A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 25MHz is present in the part.Collector current can be as low as 2A volts at its maximum.
NJVMJD117T4G Features
the DC current gain for this device is 1000 @ 2A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 40mA, 4A
the emitter base voltage is kept at 5V
a transition frequency of 25MHz
NJVMJD117T4G Applications
There are a lot of ON Semiconductor
NJVMJD117T4G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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