NJVMJD117T4G
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- Mfr.Part #
- NJVMJD117T4G
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP DARL 100V 2A DPAK
- Stock
- 9,585
- In Stock ：
- 9,585
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- Current - Collector Cutoff (Max) :
- 20μA
- Frequency - Transition :
- 25MHz
- Lead Free :
- Lead Free
- Pin Count :
- 3
- Halogen Free :
- Halogen Free
- Power - Max :
- 1.75W
- Collector Emitter Saturation Voltage :
- 2V
- Polarity :
- PNP
- Base Part Number :
- MJD117
- Mounting Type :
- Surface Mount
- Max Collector Current :
- 2A
- Collector Base Voltage (VCBO) :
- 100V
- Number of Pins :
- 3
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 2A 3V
- Operating Temperature :
- -65°C~150°C TJ
- Collector Emitter Voltage (VCEO) :
- 100V
- Element Configuration :
- Single
- Max Power Dissipation :
- 1.75W
- Surface Mount :
- yes
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 25MHz
- Factory Lead Time :
- 8 Weeks
- Published :
- 2006
- Collector Emitter Breakdown Voltage :
- 100V
- Radiation Hardening :
- No
- Terminal Finish :
- Tin (Sn)
- Emitter Base Voltage (VEBO) :
- 5V
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 40mA, 4A
- Transistor Type :
- PNP - Darlington
- Datasheets
- NJVMJD117T4G
NJVMJD117T4G Documents
PNP - Darlington -65°C~150°C TJ 20μA 1 Elements TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
NJVMJD117T4G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 1000 @ 2A 3V.With a collector emitter saturation voltage of 2V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 3V @ 40mA, 4A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 25MHz is present in the part.Collector current can be as low as 2A volts at its maximum.
NJVMJD117T4G Features
the DC current gain for this device is 1000 @ 2A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 40mA, 4A
the emitter base voltage is kept at 5V
a transition frequency of 25MHz
NJVMJD117T4G Applications
There are a lot of ON Semiconductor
NJVMJD117T4G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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