NJVMJD117T4G
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- Mfr.Part #
- NJVMJD117T4G
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP DARL 100V 2A DPAK
- Stock
- 9,585
- In Stock ：
- 9,585
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- PNP - Darlington
- Current - Collector Cutoff (Max) :
- 20μA
- Max Collector Current :
- 2A
- Number of Elements :
- 1
- Collector Base Voltage (VCBO) :
- 100V
- Polarity :
- PNP
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 8 Weeks
- Transition Frequency :
- 25MHz
- Pin Count :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 40mA, 4A
- Operating Temperature :
- -65°C~150°C TJ
- Published :
- 2006
- Terminal Finish :
- Tin (Sn)
- Pbfree Code :
- yes
- Collector Emitter Saturation Voltage :
- 2V
- Number of Pins :
- 3
- Element Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 100V
- RoHS Status :
- ROHS3 Compliant
- Max Power Dissipation :
- 1.75W
- Power - Max :
- 1.75W
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- Halogen Free :
- Halogen Free
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Collector Emitter Voltage (VCEO) :
- 100V
- Surface Mount :
- yes
- Radiation Hardening :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 2A 3V
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- Frequency - Transition :
- 25MHz
- Mounting Type :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 5V
- Lead Free :
- Lead Free
- Base Part Number :
- MJD117
- Datasheets
- NJVMJD117T4G
PNP - Darlington -65°C~150°C TJ 20μA 1 Elements TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
NJVMJD117T4G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 1000 @ 2A 3V.With a collector emitter saturation voltage of 2V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 3V @ 40mA, 4A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 25MHz is present in the part.Collector current can be as low as 2A volts at its maximum.
NJVMJD117T4G Features
the DC current gain for this device is 1000 @ 2A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 40mA, 4A
the emitter base voltage is kept at 5V
a transition frequency of 25MHz
NJVMJD117T4G Applications
There are a lot of ON Semiconductor
NJVMJD117T4G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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