NJVMJB41CT4G
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- Mfr.Part #
- NJVMJB41CT4G
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- TRANS NPN D2PAK
- Stock
- 398,859
- In Stock ：
- 398,859
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Operating Temperature :
- -65°C~150°C TJ
- Pin Count :
- 3
- Pbfree Code :
- yes
- Max Breakdown Voltage :
- 100V
- JESD-30 Code :
- R-PSSO-G2
- Emitter Base Voltage (VEBO) :
- 5V
- Max Power Dissipation :
- 2W
- Lead Free :
- Lead Free
- Current - Collector Cutoff (Max) :
- 700µA
- Transition Frequency :
- 3MHz
- Factory Lead Time :
- 4 Weeks
- Surface Mount :
- yes
- Published :
- 2005
- Collector Base Voltage (VCBO) :
- 100V
- JESD-609 Code :
- e3
- Width :
- 11.05mm
- Transistor Element Material :
- SILICON
- Base Part Number :
- MJB41
- Collector Emitter Voltage (VCEO) :
- 100V
- Transistor Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Collector Emitter Breakdown Voltage :
- 100V
- Collector Emitter Saturation Voltage :
- 1.5V
- Gain Bandwidth Product :
- 3MHz
- RoHS Status :
- ROHS3 Compliant
- Case Connection :
- COLLECTOR
- Number of Pins :
- 3
- Max Collector Current :
- 6A
- Radiation Hardening :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 3A 4V
- Power Dissipation :
- 2W
- Polarity/Channel Type :
- NPN
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 600mA, 6A
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Terminal Finish :
- Tin (Sn)
- Length :
- 10.29mm
- Height :
- 4.83mm
- Terminal Form :
- Gull wing
- Number of Terminations :
- 2
- Frequency :
- 3MHz
- Datasheets
- NJVMJB41CT4G
NPN -65°C~150°C TJ 700μA 1 Elements 2 Terminations SILICON NPN TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Tape & Reel (TR) Surface Mount
NJVMJB41CT4G Overview
In this device, the DC current gain is 15 @ 3A 4V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 1.5V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.5V @ 600mA, 6A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.3MHz is present in the transition frequency.An input voltage of 100V volts is the breakdown voltage.Maximum collector currents can be below 6A volts.
NJVMJB41CT4G Features
the DC current gain for this device is 15 @ 3A 4V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 600mA, 6A
the emitter base voltage is kept at 5V
a transition frequency of 3MHz
NJVMJB41CT4G Applications
There are a lot of ON Semiconductor
NJVMJB41CT4G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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