NJVMJB41CT4G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

RoHS Status :

ROHS3 Compliant

Collector Base Voltage (VCBO) :

100V

Width :

11.05mm

Current - Collector Cutoff (Max) :

700µA

Number of Elements :

1

Max Power Dissipation :

2W

Gain Bandwidth Product :

3MHz

Transistor Type :

NPN

Packaging :

Tape and Reel (TR)

Max Collector Current :

6A

Surface Mount :

yes

Polarity/Channel Type :

NPN

Max Breakdown Voltage :

100V

Pin Count :

3

JESD-609 Code :

e3

DC Current Gain (hFE) (Min) @ Ic, Vce :

15 @ 3A 4V

Element Configuration :

Single

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Published :

2005

Emitter Base Voltage (VEBO) :

5V

Height :

4.83mm

Radiation Hardening :

No

Case Connection :

COLLECTOR

Terminal Form :

Gull wing

Base Part Number :

MJB41

Power Dissipation :

2W

Terminal Finish :

Tin (Sn)

Number of Terminations :

2

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

ECCN Code :

EAR99

Factory Lead Time :

4 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

Collector Emitter Breakdown Voltage :

100V

Length :

10.29mm

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Frequency :

3MHz

Collector Emitter Voltage (VCEO) :

100V

Vce Saturation (Max) @ Ib, Ic :

1.5V @ 600mA, 6A

Collector Emitter Saturation Voltage :

1.5V

Transition Frequency :

3MHz

Operating Temperature :

-65°C~150°C TJ

JESD-30 Code :

R-PSSO-G2

Mounting Type :

Surface Mount

Pbfree Code :

yes