NJVMJB41CT4G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Max Breakdown Voltage :

100V

Polarity/Channel Type :

NPN

Frequency :

3MHz

Collector Base Voltage (VCBO) :

100V

Radiation Hardening :

No

Pin Count :

3

Published :

2005

Surface Mount :

yes

Current - Collector Cutoff (Max) :

700µA

Terminal Finish :

Tin (Sn)

Collector Emitter Saturation Voltage :

1.5V

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

JESD-609 Code :

e3

DC Current Gain (hFE) (Min) @ Ic, Vce :

15 @ 3A 4V

Gain Bandwidth Product :

3MHz

Number of Pins :

3

Emitter Base Voltage (VEBO) :

5V

Operating Temperature :

-65°C~150°C TJ

JESD-30 Code :

R-PSSO-G2

Max Collector Current :

6A

Number of Terminations :

2

Terminal Form :

Gull wing

Length :

10.29mm

ECCN Code :

EAR99

Power Dissipation :

2W

Width :

11.05mm

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Vce Saturation (Max) @ Ib, Ic :

1.5V @ 600mA, 6A

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Case Connection :

COLLECTOR

Transistor Element Material :

SILICON

Collector Emitter Voltage (VCEO) :

100V

Base Part Number :

MJB41

Height :

4.83mm

Max Power Dissipation :

2W

Collector Emitter Breakdown Voltage :

100V

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Transistor Type :

NPN

Factory Lead Time :

4 Weeks

Element Configuration :

Single

Transition Frequency :

3MHz