NJVMJB41CT4G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

DC Current Gain (hFE) (Min) @ Ic, Vce :

15 @ 3A 4V

Vce Saturation (Max) @ Ib, Ic :

1.5V @ 600mA, 6A

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Element Configuration :

Single

Power Dissipation :

2W

Mounting Type :

Surface Mount

Surface Mount :

yes

Number of Pins :

3

JESD-609 Code :

e3

Max Collector Current :

6A

Collector Emitter Saturation Voltage :

1.5V

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Factory Lead Time :

4 Weeks

Case Connection :

COLLECTOR

Current - Collector Cutoff (Max) :

700µA

Collector Emitter Voltage (VCEO) :

100V

Radiation Hardening :

No

Collector Emitter Breakdown Voltage :

100V

Emitter Base Voltage (VEBO) :

5V

Width :

11.05mm

Lead Free :

Lead Free

Length :

10.29mm

Height :

4.83mm

Operating Temperature :

-65°C~150°C TJ

Collector Base Voltage (VCBO) :

100V

Base Part Number :

MJB41

Terminal Finish :

Tin (Sn)

Max Power Dissipation :

2W

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Number of Elements :

1

JESD-30 Code :

R-PSSO-G2

RoHS Status :

ROHS3 Compliant

Transition Frequency :

3MHz

Gain Bandwidth Product :

3MHz

Transistor Element Material :

SILICON

Published :

2005

Pbfree Code :

yes

Transistor Type :

NPN

Polarity/Channel Type :

NPN

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

2

Pin Count :

3

Max Breakdown Voltage :

100V

Frequency :

3MHz