NJVMJD127T4G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Max Collector Current :

8A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Case Connection :

COLLECTOR

Polarity/Channel Type :

PNP

Published :

2008

Factory Lead Time :

22 Weeks

Collector Emitter Breakdown Voltage :

100V

Configuration :

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

Mount :

Surface Mount

JESD-30 Code :

R-PSSO-G2

Number of Pins :

3

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Number of Elements :

1

JESD-609 Code :

e3

Reach Compliance Code :

not_compliant

Operating Temperature :

-65°C~150°C TJ

Lead Free :

Lead Free

Max Power Dissipation :

20W

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

AMPLIFIER

RoHS Status :

ROHS3 Compliant

Power - Max :

20W

Pbfree Code :

yes

DC Current Gain (hFE) (Min) @ Ic, Vce :

1000 @ 4A 4V

Transistor Type :

PNP - Darlington

Terminal Finish :

Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

3

Reference Standard :

AEC-Q101

Terminal Position :

Single

Terminal Form :

Gull wing

Number of Terminations :

2

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Transition Frequency :

4MHz

Collector Emitter Voltage (VCEO) :

4V

Current - Collector Cutoff (Max) :

10μA

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Vce Saturation (Max) @ Ib, Ic :

4V @ 80mA, 8A

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99