NJVMJB45H11T4G

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Mfr.Part #
NJVMJB45H11T4G
Manufacturer
onsemi
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
TRANS PNP 80V 10A D2PAK
Stock
7,107
In Stock :
7,107

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Frequency - Transition :
40MHz
Power - Max :
2W
Operating Temperature :
-55°C~150°C TJ
Vce Saturation (Max) @ Ib, Ic :
1V @ 400mA, 8A
Published :
2006
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Lifecycle Status :
ACTIVE (Last Updated: 6 days ago)
Configuration :
Single
Surface Mount :
yes
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Terminal Finish :
Tin (Sn)
Transistor Type :
PNP
Base Part Number :
MJB45H11
Pin Count :
3
Factory Lead Time :
7 Weeks
Max Collector Current :
10A
Radiation Hardening :
No
Collector Emitter Voltage (VCEO) :
1V
Current - Collector Cutoff (Max) :
10μA
Lead Free :
Lead Free
Number of Pins :
3
Emitter Base Voltage (VEBO) :
5V
Max Power Dissipation :
2W
Collector Emitter Breakdown Voltage :
80V
Pbfree Code :
yes
ECCN Code :
EAR99
Polarity/Channel Type :
PNP
Packaging :
Tape and Reel (TR)
DC Current Gain (hFE) (Min) @ Ic, Vce :
40 @ 4A 1V
JESD-609 Code :
e3
RoHS Status :
ROHS3 Compliant
Mounting Type :
Surface Mount
Datasheets
NJVMJB45H11T4G
Introducing Transistors - Bipolar (BJT) - Single onsemi NJVMJB45H11T4G from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Base Part Number:MJB45H11, Number of Pins:3, Mounting Type:Surface Mount, NJVMJB45H11T4G pinout, NJVMJB45H11T4G datasheet PDF, NJVMJB45H11T4G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi NJVMJB45H11T4G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NJVMJB45H11T4G


PNP -55°C~150°C TJ 10μA PNP TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Tape & Reel (TR) Surface Mount

NJVMJB45H11T4G Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 4A 1V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 400mA, 8A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.Collector current can be as low as 10A volts at its maximum.

NJVMJB45H11T4G Features


the DC current gain for this device is 40 @ 4A 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V


NJVMJB45H11T4G Applications


There are a lot of ON Semiconductor
NJVMJB45H11T4G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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